Epitaxial growth of GaInAsBi thin films on Si (001) substrate using pulsed laser deposition

The results of a comprehensive study of growing a Ga1-yInyAs1-xBix quaternary alloy on a Si (001) substrate, determining the composition, studying structural properties, relaxation mechanisms and surface morphology are presented. Using pulsed laser deposition, epitaxial growth of the Ga1-yInyAs1-xBi...

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मुख्य लेखकों:	Pashchenko, A. S., Пащенко, А. С., Devitsky, O. V., Девицкий, О. В.
स्वरूप:	Статья
भाषा:	English
प्रकाशित:	Elsevier Ltd 2024
विषय:	Semiconducting quaternary alloys Silicon Highly mismatched alloys III–V compounds Pulsed laser deposition
ऑनलाइन पहुंच:	https://dspace.ncfu.ru/handle/123456789/28667
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record_format	dspace
spelling	ir-123456789-286672024-07-31T11:44:35Z Epitaxial growth of GaInAsBi thin films on Si (001) substrate using pulsed laser deposition Pashchenko, A. S. Пащенко, А. С. Devitsky, O. V. Девицкий, О. В. Semiconducting quaternary alloys Silicon Highly mismatched alloys III–V compounds Pulsed laser deposition The results of a comprehensive study of growing a Ga1-yInyAs1-xBix quaternary alloy on a Si (001) substrate, determining the composition, studying structural properties, relaxation mechanisms and surface morphology are presented. Using pulsed laser deposition, epitaxial growth of the Ga1-yInyAs1-xBix thin film was carried out on the Si (001) substrate. Using X-ray diffraction, it was established that the Ga1-yInyAs1-xBix film was grown with a large lattice mismatch (Δa/a = 7.838 %). It is shown that the film has a well-pronounced texture in the [001] growth direction, a lattice parameter of 5.856 Å. Using Medium Energy Ion Scattering, a decrease in the In concentration after a layer thickness ≈15 nm from 0.5 to 0.4 mol frac. was detected. An important result is the homogeneous distribution of Bi throughout the layer thickness. Structural studies allow for the conclusion that stress relaxation occurred because of shears by means of a nucleation of dislocations and a slip close-packed {111} planes, as well as twinning, which led to a change in composition after a thickness of ≈15 nm from the substrate and an increase in the surface roughness of the layer. 2024-07-31T11:43:38Z 2024-07-31T11:43:38Z 2024 Статья Pashchenko, A.S., Devitsky, O.V., Lunina, M.L., Danilina, E.M., Pashchenko, O.S., Ber, B., Sakharov, V.I. Epitaxial growth of GaInAsBi thin films on Si (001) substrate using pulsed laser deposition // Vacuum. - 2024. - 227. - статья № 113372. - DOI: 10.1016/j.vacuum.2024.113372 https://dspace.ncfu.ru/handle/123456789/28667 en Vacuum application/pdf application/pdf Elsevier Ltd
institution	СКФУ
collection	Репозиторий
language	English
topic	Semiconducting quaternary alloys Silicon Highly mismatched alloys III–V compounds Pulsed laser deposition
spellingShingle	Semiconducting quaternary alloys Silicon Highly mismatched alloys III–V compounds Pulsed laser deposition Pashchenko, A. S. Пащенко, А. С. Devitsky, O. V. Девицкий, О. В. Epitaxial growth of GaInAsBi thin films on Si (001) substrate using pulsed laser deposition
description	The results of a comprehensive study of growing a Ga1-yInyAs1-xBix quaternary alloy on a Si (001) substrate, determining the composition, studying structural properties, relaxation mechanisms and surface morphology are presented. Using pulsed laser deposition, epitaxial growth of the Ga1-yInyAs1-xBix thin film was carried out on the Si (001) substrate. Using X-ray diffraction, it was established that the Ga1-yInyAs1-xBix film was grown with a large lattice mismatch (Δa/a = 7.838 %). It is shown that the film has a well-pronounced texture in the [001] growth direction, a lattice parameter of 5.856 Å. Using Medium Energy Ion Scattering, a decrease in the In concentration after a layer thickness ≈15 nm from 0.5 to 0.4 mol frac. was detected. An important result is the homogeneous distribution of Bi throughout the layer thickness. Structural studies allow for the conclusion that stress relaxation occurred because of shears by means of a nucleation of dislocations and a slip close-packed {111} planes, as well as twinning, which led to a change in composition after a thickness of ≈15 nm from the substrate and an increase in the surface roughness of the layer.
format	Статья
author	Pashchenko, A. S. Пащенко, А. С. Devitsky, O. V. Девицкий, О. В.
author_facet	Pashchenko, A. S. Пащенко, А. С. Devitsky, O. V. Девицкий, О. В.
author_sort	Pashchenko, A. S.
title	Epitaxial growth of GaInAsBi thin films on Si (001) substrate using pulsed laser deposition
title_short	Epitaxial growth of GaInAsBi thin films on Si (001) substrate using pulsed laser deposition
title_full	Epitaxial growth of GaInAsBi thin films on Si (001) substrate using pulsed laser deposition
title_fullStr	Epitaxial growth of GaInAsBi thin films on Si (001) substrate using pulsed laser deposition
title_full_unstemmed	Epitaxial growth of GaInAsBi thin films on Si (001) substrate using pulsed laser deposition
title_sort	epitaxial growth of gainasbi thin films on si (001) substrate using pulsed laser deposition
publisher	Elsevier Ltd
publishDate	2024
url	https://dspace.ncfu.ru/handle/123456789/28667
work_keys_str_mv	AT pashchenkoas epitaxialgrowthofgainasbithinfilmsonsi001substrateusingpulsedlaserdeposition AT paŝenkoas epitaxialgrowthofgainasbithinfilmsonsi001substrateusingpulsedlaserdeposition AT devitskyov epitaxialgrowthofgainasbithinfilmsonsi001substrateusingpulsedlaserdeposition AT devickijov epitaxialgrowthofgainasbithinfilmsonsi001substrateusingpulsedlaserdeposition
_version_	1809808907682447360

Epitaxial growth of GaInAsBi thin films on Si (001) substrate using pulsed laser deposition

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