Epitaxial growth of GaInAsBi thin films on Si (001) substrate using pulsed laser deposition

Epitaxial growth of GaInAsBi thin films on Si (001) substrate using pulsed laser deposition

The results of a comprehensive study of growing a Ga1-yInyAs1-xBix quaternary alloy on a Si (001) substrate, determining the composition, studying structural properties, relaxation mechanisms and surface morphology are presented. Using pulsed laser deposition, epitaxial growth of the Ga1-yInyAs1-xBi...

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Bibliografische gegevens
Hoofdauteurs:	Pashchenko, A. S., Пащенко, А. С., Devitsky, O. V., Девицкий, О. В.
Formaat:	Статья
Taal:	English
Gepubliceerd in:	Elsevier Ltd 2024
Onderwerpen:	Semiconducting quaternary alloys Silicon Highly mismatched alloys III–V compounds Pulsed laser deposition
Online toegang:	https://dspace.ncfu.ru/handle/123456789/28667
Tags:	Voeg label toe Geen labels, Wees de eerste die dit record labelt!

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