Epitaxial growth of GaInAsBi thin films on Si (001) substrate using pulsed laser deposition
The results of a comprehensive study of growing a Ga1-yInyAs1-xBix quaternary alloy on a Si (001) substrate, determining the composition, studying structural properties, relaxation mechanisms and surface morphology are presented. Using pulsed laser deposition, epitaxial growth of the Ga1-yInyAs1-xBi...
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| Hauptverfasser: | , , , |
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| Format: | Статья |
| Sprache: | English |
| Veröffentlicht: |
Elsevier Ltd
2024
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| Online Zugang: | https://dspace.ncfu.ru/handle/123456789/28667 |
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