Epitaxial growth of GaInAsBi thin films on Si (001) substrate using pulsed laser deposition
The results of a comprehensive study of growing a Ga1-yInyAs1-xBix quaternary alloy on a Si (001) substrate, determining the composition, studying structural properties, relaxation mechanisms and surface morphology are presented. Using pulsed laser deposition, epitaxial growth of the Ga1-yInyAs1-xBi...
Gorde:
| Egile Nagusiak: | , , , |
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| Formatua: | Статья |
| Hizkuntza: | English |
| Argitaratua: |
Elsevier Ltd
2024
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| Gaiak: | |
| Sarrera elektronikoa: | https://dspace.ncfu.ru/handle/123456789/28667 |
| Etiketak: |
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