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Epitaxial growth of GaInAsBi thin films on Si (001) substrate using pulsed laser deposition

The results of a comprehensive study of growing a Ga1-yInyAs1-xBix quaternary alloy on a Si (001) substrate, determining the composition, studying structural properties, relaxation mechanisms and surface morphology are presented. Using pulsed laser deposition, epitaxial growth of the Ga1-yInyAs1-xBi...

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Главные авторы: Pashchenko, A. S., Пащенко, А. С., Devitsky, O. V., Девицкий, О. В.
格式: Статья
語言:English
出版: Elsevier Ltd 2024
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在線閱讀:https://dspace.ncfu.ru/handle/123456789/28667
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