Electrical and photovoltaic properties of Au- n -CuInSe2based Schottky barriers

The study proposes promising Schottky barriers for solar cells based on Au-π-CuInSe2 and Au-π-Tl1-xCuxInSe2 (X=1.0; 0.985) following the experimental study of volt-ampere, capacitance-voltage characteristics (VAC, CVC), as well as the spectral distribution of photoelectromotive force (photo-emf) and...

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Главные авторы:	Sysoev, I. A., Сысоев, И. А.
Формат:	Статья
Язык:	English
Опубликовано:	American Institute of Physics 2024
Темы:	Schottky barriers Electrical properties Photovoltaic properties
Online-ссылка:	https://dspace.ncfu.ru/handle/123456789/29343
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id	ir-123456789-29343
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spelling	ir-123456789-293432024-12-09T14:03:32Z Electrical and photovoltaic properties of Au- n -CuInSe2based Schottky barriers Sysoev, I. A. Сысоев, И. А. Schottky barriers Electrical properties Photovoltaic properties The study proposes promising Schottky barriers for solar cells based on Au-π-CuInSe2 and Au-π-Tl1-xCuxInSe2 (X=1.0; 0.985) following the experimental study of volt-ampere, capacitance-voltage characteristics (VAC, CVC), as well as the spectral distribution of photoelectromotive force (photo-emf) and quantum efficiency. It was found that the substitution of thallium atoms with copper atoms makes it possible to control both the contact potential difference and the spectral interval of the maximum quantum output of Schottky barriers based on Au-π-Tl1-xCuxInSe2. 2024-12-09T14:02:40Z 2024-12-09T14:02:40Z 2024 Статья Matiyev, A.K., Uspazhiev, R.T., Khasanov, A.I., Zubkhadzhiev, M.-A.V., Dzhambulatov, R.S., Sysoev, I.A. Electrical and photovoltaic properties of Au- n -CuInSe2based Schottky barriers // AIP Conference Proceedings. - 2024. - 3183 (1). - статья № 040003. - DOI: 10.1063/5.0225475 https://dspace.ncfu.ru/handle/123456789/29343 en AIP Conference Proceedings application/pdf American Institute of Physics
institution	СКФУ
collection	Репозиторий
language	English
topic	Schottky barriers Electrical properties Photovoltaic properties
spellingShingle	Schottky barriers Electrical properties Photovoltaic properties Sysoev, I. A. Сысоев, И. А. Electrical and photovoltaic properties of Au- n -CuInSe2based Schottky barriers
description	The study proposes promising Schottky barriers for solar cells based on Au-π-CuInSe2 and Au-π-Tl1-xCuxInSe2 (X=1.0; 0.985) following the experimental study of volt-ampere, capacitance-voltage characteristics (VAC, CVC), as well as the spectral distribution of photoelectromotive force (photo-emf) and quantum efficiency. It was found that the substitution of thallium atoms with copper atoms makes it possible to control both the contact potential difference and the spectral interval of the maximum quantum output of Schottky barriers based on Au-π-Tl1-xCuxInSe2.
format	Статья
author	Sysoev, I. A. Сысоев, И. А.
author_facet	Sysoev, I. A. Сысоев, И. А.
author_sort	Sysoev, I. A.
title	Electrical and photovoltaic properties of Au- n -CuInSe2based Schottky barriers
title_short	Electrical and photovoltaic properties of Au- n -CuInSe2based Schottky barriers
title_full	Electrical and photovoltaic properties of Au- n -CuInSe2based Schottky barriers
title_fullStr	Electrical and photovoltaic properties of Au- n -CuInSe2based Schottky barriers
title_full_unstemmed	Electrical and photovoltaic properties of Au- n -CuInSe2based Schottky barriers
title_sort	electrical and photovoltaic properties of au- n -cuinse2based schottky barriers
publisher	American Institute of Physics
publishDate	2024
url	https://dspace.ncfu.ru/handle/123456789/29343
work_keys_str_mv	AT sysoevia electricalandphotovoltaicpropertiesofauncuinse2basedschottkybarriers AT sysoevia electricalandphotovoltaicpropertiesofauncuinse2basedschottkybarriers
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Electrical and photovoltaic properties of Au- n -CuInSe2based Schottky barriers

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