Pulsed laser deposition OF III-V semiconductor thin films: review

This review highlights the latest advancements in pulsed laser deposition of III-V semiconductor thin films on various substrates. The pulsed laser deposition method is shown to be highly effective and distinct from other thin film deposition techniques due to its discrete nature. Epitaxial growth o...

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Главные авторы:	Devitsky, O. V., Девицкий, О. В.
Формат:	Статья
Язык:	Russian
Опубликовано:	Tver State University 2025
Темы:	Pulsed laser deposition Thin films III-V compounds Substrate temperature Energy density Stoichiometry
Online-ссылка:	https://dspace.ncfu.ru/handle/123456789/29614
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id	ir-123456789-29614
record_format	dspace
spelling	ir-123456789-296142025-02-04T12:44:09Z Pulsed laser deposition OF III-V semiconductor thin films: review Devitsky, O. V. Девицкий, О. В. Pulsed laser deposition Thin films III-V compounds Substrate temperature Energy density Stoichiometry This review highlights the latest advancements in pulsed laser deposition of III-V semiconductor thin films on various substrates. The pulsed laser deposition method is shown to be highly effective and distinct from other thin film deposition techniques due to its discrete nature. Epitaxial growth of III-V thin films is crucial for developing new optoelectronic devices. The review presents experimental data on how various pulsed laser deposition parameters affect the structural, optical, and electrical properties as well as the stoichiometry of binary and multicomponent III-V thin films. It is demonstrated that achieving the highest structural quality in III-V thin films requires using femtosecond and nanosecond lasers with wavelengths ranging from 248 nm to 532 nm, a pulse energy density of no more than 3 J/cm², and substrate temperatures between 300 and 400°C. Additionally, the target material should be monolithic and have the highest possible density. 2025-02-04T12:43:30Z 2025-02-04T12:43:30Z 2024 Статья Devitsky, O. V. Pulsed laser deposition OF III-V semiconductor thin films: review // PHYSICAL AND CHEMICAL ASPECTS OF THE STUDY OF CLUSTERS NANOSTRUCTURES AND NANOMATERIALS. - 2024. - 16. - pp. 621-630. - DOI: 10.26456/pcascnn/2024.16.621 https://dspace.ncfu.ru/handle/123456789/29614 ru PHYSICAL AND CHEMICAL ASPECTS OF THE STUDY OF CLUSTERS NANOSTRUCTURES AND NANOMATERIALS application/pdf Tver State University
institution	СКФУ
collection	Репозиторий
language	Russian
topic	Pulsed laser deposition Thin films III-V compounds Substrate temperature Energy density Stoichiometry
spellingShingle	Pulsed laser deposition Thin films III-V compounds Substrate temperature Energy density Stoichiometry Devitsky, O. V. Девицкий, О. В. Pulsed laser deposition OF III-V semiconductor thin films: review
description	This review highlights the latest advancements in pulsed laser deposition of III-V semiconductor thin films on various substrates. The pulsed laser deposition method is shown to be highly effective and distinct from other thin film deposition techniques due to its discrete nature. Epitaxial growth of III-V thin films is crucial for developing new optoelectronic devices. The review presents experimental data on how various pulsed laser deposition parameters affect the structural, optical, and electrical properties as well as the stoichiometry of binary and multicomponent III-V thin films. It is demonstrated that achieving the highest structural quality in III-V thin films requires using femtosecond and nanosecond lasers with wavelengths ranging from 248 nm to 532 nm, a pulse energy density of no more than 3 J/cm², and substrate temperatures between 300 and 400°C. Additionally, the target material should be monolithic and have the highest possible density.
format	Статья
author	Devitsky, O. V. Девицкий, О. В.
author_facet	Devitsky, O. V. Девицкий, О. В.
author_sort	Devitsky, O. V.
title	Pulsed laser deposition OF III-V semiconductor thin films: review
title_short	Pulsed laser deposition OF III-V semiconductor thin films: review
title_full	Pulsed laser deposition OF III-V semiconductor thin films: review
title_fullStr	Pulsed laser deposition OF III-V semiconductor thin films: review
title_full_unstemmed	Pulsed laser deposition OF III-V semiconductor thin films: review
title_sort	pulsed laser deposition of iii-v semiconductor thin films: review
publisher	Tver State University
publishDate	2025
url	https://dspace.ncfu.ru/handle/123456789/29614
work_keys_str_mv	AT devitskyov pulsedlaserdepositionofiiivsemiconductorthinfilmsreview AT devickijov pulsedlaserdepositionofiiivsemiconductorthinfilmsreview
_version_	1842245580390137856

Pulsed laser deposition OF III-V semiconductor thin films: review

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