Advances and perspectives in the growth of III-N heterostructures for solar cells: an overview

This review discusses recent advancements in the fabrication of III-N based solar cells, emphasizing the technical challenges that have impeded efforts to enhance their efficiency. It also assesses the current status and future potential of growing heterostructures for these solar cells using variou...

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Главные авторы:	Devitsky, O. V., Девицкий, О. В., Pashchenko, A. S., Пащенко, А. С., Sysoev, I. A., Сысоев, И. А., Nikulin, D. A., Никулин, Д. А.
Формат:	Статья
Язык:	English
Опубликовано:	Elsevier B.V. 2025
Темы:	Heterostructure Photovoltaic III-N material MBE MOCVD Solar cell
Online-ссылка:	https://dspace.ncfu.ru/handle/123456789/31108
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id	ir-123456789-31108
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spelling	ir-123456789-311082025-07-10T14:16:26Z Advances and perspectives in the growth of III-N heterostructures for solar cells: an overview Devitsky, O. V. Девицкий, О. В. Pashchenko, A. S. Пащенко, А. С. Sysoev, I. A. Сысоев, И. А. Nikulin, D. A. Никулин, Д. А. Heterostructure Photovoltaic III-N material MBE MOCVD Solar cell This review discusses recent advancements in the fabrication of III-N based solar cells, emphasizing the technical challenges that have impeded efforts to enhance their efficiency. It also assesses the current status and future potential of growing heterostructures for these solar cells using various methods. III-N are characterized by a high solar light absorption coefficient and excellent radiation resistance, which give them a distinct advantage over silicon and gallium arsenide. These properties make. III-N particularly suitable for manufacturing space-grade solar cells. However, most experimentally fabricated III-N based solar cells exhibit lower efficiencies than those predicted theoretically. This review identifies the main limitations in the growth of III-N based solar cells, including spinodal decomposition, spontaneous and piezoelectric polarization effects, difficulties in achieving p-type conductivity, high density of dislocations (greater than 106 cm−2), narrow indium concentration ranges for thermodynamically stable compositions, challenges in growth thick layers with high indium content, and the absence of a native substrate for III-N materials. The review compares and thoroughly analyzes the advantages and disadvantages of each method used to fabricate III-N based solar cells, ultimately recommending metalorganic chemical vapor deposition (MOCVD) as the optimal growth technique. For MOCVD, it is suggested that substrate temperature are set between 700 and 800 °C for InGaN layers and 1000–1100 °C for AlGaN and AlInN layers. This review not only summarizes the latest achievements in the development of III-N materials for space solar cells, but also highlights the main problems of their manufacture and describes the directions of future research in this area. 2025-07-10T14:13:44Z 2025-07-10T14:13:44Z 2025 Статья Devitsky O.V., Pashchenko A.S., Lunin L.S., Sysoev I.A., Nikulin D.A. Advances and perspectives in the growth of III-N heterostructures for solar cells: an overview // Solar Energy Materials and Solar Cells. - 2025. - 292. - art. no. 113818. - DOI: 10.1016/j.solmat.2025.113818 https://dspace.ncfu.ru/handle/123456789/31108 en Solar Energy Materials and Solar Cells application/pdf application/pdf Elsevier B.V.
institution	СКФУ
collection	Репозиторий
language	English
topic	Heterostructure Photovoltaic III-N material MBE MOCVD Solar cell
spellingShingle	Heterostructure Photovoltaic III-N material MBE MOCVD Solar cell Devitsky, O. V. Девицкий, О. В. Pashchenko, A. S. Пащенко, А. С. Sysoev, I. A. Сысоев, И. А. Nikulin, D. A. Никулин, Д. А. Advances and perspectives in the growth of III-N heterostructures for solar cells: an overview
description	This review discusses recent advancements in the fabrication of III-N based solar cells, emphasizing the technical challenges that have impeded efforts to enhance their efficiency. It also assesses the current status and future potential of growing heterostructures for these solar cells using various methods. III-N are characterized by a high solar light absorption coefficient and excellent radiation resistance, which give them a distinct advantage over silicon and gallium arsenide. These properties make. III-N particularly suitable for manufacturing space-grade solar cells. However, most experimentally fabricated III-N based solar cells exhibit lower efficiencies than those predicted theoretically. This review identifies the main limitations in the growth of III-N based solar cells, including spinodal decomposition, spontaneous and piezoelectric polarization effects, difficulties in achieving p-type conductivity, high density of dislocations (greater than 106 cm−2), narrow indium concentration ranges for thermodynamically stable compositions, challenges in growth thick layers with high indium content, and the absence of a native substrate for III-N materials. The review compares and thoroughly analyzes the advantages and disadvantages of each method used to fabricate III-N based solar cells, ultimately recommending metalorganic chemical vapor deposition (MOCVD) as the optimal growth technique. For MOCVD, it is suggested that substrate temperature are set between 700 and 800 °C for InGaN layers and 1000–1100 °C for AlGaN and AlInN layers. This review not only summarizes the latest achievements in the development of III-N materials for space solar cells, but also highlights the main problems of their manufacture and describes the directions of future research in this area.
format	Статья
author	Devitsky, O. V. Девицкий, О. В. Pashchenko, A. S. Пащенко, А. С. Sysoev, I. A. Сысоев, И. А. Nikulin, D. A. Никулин, Д. А.
author_facet	Devitsky, O. V. Девицкий, О. В. Pashchenko, A. S. Пащенко, А. С. Sysoev, I. A. Сысоев, И. А. Nikulin, D. A. Никулин, Д. А.
author_sort	Devitsky, O. V.
title	Advances and perspectives in the growth of III-N heterostructures for solar cells: an overview
title_short	Advances and perspectives in the growth of III-N heterostructures for solar cells: an overview
title_full	Advances and perspectives in the growth of III-N heterostructures for solar cells: an overview
title_fullStr	Advances and perspectives in the growth of III-N heterostructures for solar cells: an overview
title_full_unstemmed	Advances and perspectives in the growth of III-N heterostructures for solar cells: an overview
title_sort	advances and perspectives in the growth of iii-n heterostructures for solar cells: an overview
publisher	Elsevier B.V.
publishDate	2025
url	https://dspace.ncfu.ru/handle/123456789/31108
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Advances and perspectives in the growth of III-N heterostructures for solar cells: an overview

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