Resonant-frequency properties of low-dimensional junction of semiconductor-metal-semiconductor and calculation methodology

The article describes frequency characteristics of semiconductor-metal-semiconductor Si-Ag-Si structures (ohmic contacts) having metal nanolayers as well as features of resonance phenomenon and sandwich structure energy interaction. Mathematical simulation of mentioned above processes is provided. T...

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Главные авторы:	Valyukhov, D. P., Валюхов, Д. П., Baklanov, I. S., Бакланов, И. С., Shtab, E. V., Штаб, Э. В., Shtab, A. V., Штаб, А. В., Pigulev, R. V., Пигулев, Р. В., Iliasov, A. S., Ильясов, А. Ш.
格式:	Статья
语言:	English
出版:	Institute of Physics Publishing 2020
主题:	Semiconducting silicon compounds Silver compounds Research laboratories Metals Natural frequencies Ohmic contacts Quality control
在线阅读:	https://www.scopus.com/record/display.uri?eid=2-s2.0-85077954308&origin=resultslist&sort=plf-f&src=s&st1=Resonant-frequency+properties+of+low-dimensional+junction+of+semiconductor-metal-semiconductor+and+calculation+methodology&st2=&sid=06bfe297a5d6aa23ab9ecf239eeb9ff0&sot=b&sdt=b&sl=137&s=TITLE-ABS-KEY%28Resonant-frequency+properties+of+low-dimensional+junction+of+semiconductor-metal-semiconductor+and+calculation+methodology%29&relpos=0&citeCnt=0&searchTerm= https://dspace.ncfu.ru/handle/20.500.12258/11217
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总结:	The article describes frequency characteristics of semiconductor-metal-semiconductor Si-Ag-Si structures (ohmic contacts) having metal nanolayers as well as features of resonance phenomenon and sandwich structure energy interaction. Mathematical simulation of mentioned above processes is provided. The limiting factor for resonance process is determined. It is found that the resonance frequency is a subject of semiconductor-metal junction parameters while metal layer thickness impact is minor

Resonant-frequency properties of low-dimensional junction of semiconductor-metal-semiconductor and calculation methodology

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