Resonant-frequency properties of low-dimensional junction of semiconductor-metal-semiconductor and calculation methodology

The article describes frequency characteristics of semiconductor-metal-semiconductor Si-Ag-Si structures (ohmic contacts) having metal nanolayers as well as features of resonance phenomenon and sandwich structure energy interaction. Mathematical simulation of mentioned above processes is provided. T...

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Главные авторы:	Valyukhov, D. P., Валюхов, Д. П., Baklanov, I. S., Бакланов, И. С., Shtab, E. V., Штаб, Э. В., Shtab, A. V., Штаб, А. В., Pigulev, R. V., Пигулев, Р. В., Iliasov, A. S., Ильясов, А. Ш.
Formato:	Статья
Idioma:	English
Publicado:	Institute of Physics Publishing 2020
Темы:	Semiconducting silicon compounds Silver compounds Research laboratories Metals Natural frequencies Ohmic contacts Quality control
Acceso en liña:	https://www.scopus.com/record/display.uri?eid=2-s2.0-85077954308&origin=resultslist&sort=plf-f&src=s&st1=Resonant-frequency+properties+of+low-dimensional+junction+of+semiconductor-metal-semiconductor+and+calculation+methodology&st2=&sid=06bfe297a5d6aa23ab9ecf239eeb9ff0&sot=b&sdt=b&sl=137&s=TITLE-ABS-KEY%28Resonant-frequency+properties+of+low-dimensional+junction+of+semiconductor-metal-semiconductor+and+calculation+methodology%29&relpos=0&citeCnt=0&searchTerm= https://dspace.ncfu.ru/handle/20.500.12258/11217
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spelling	ir-20.500.12258-112172020-01-30T08:55:07Z Resonant-frequency properties of low-dimensional junction of semiconductor-metal-semiconductor and calculation methodology Valyukhov, D. P. Валюхов, Д. П. Baklanov, I. S. Бакланов, И. С. Shtab, E. V. Штаб, Э. В. Shtab, A. V. Штаб, А. В. Pigulev, R. V. Пигулев, Р. В. Iliasov, A. S. Ильясов, А. Ш. Semiconducting silicon compounds Silver compounds Research laboratories Metals Natural frequencies Ohmic contacts Quality control The article describes frequency characteristics of semiconductor-metal-semiconductor Si-Ag-Si structures (ohmic contacts) having metal nanolayers as well as features of resonance phenomenon and sandwich structure energy interaction. Mathematical simulation of mentioned above processes is provided. The limiting factor for resonance process is determined. It is found that the resonance frequency is a subject of semiconductor-metal junction parameters while metal layer thickness impact is minor 2020-01-30T08:53:13Z 2020-01-30T08:53:13Z 2019 Статья Valiukhov, D.P., Baklanov, I.S., Shtab, E.V., Shtab, A.V., Pigulev, R.V., Iliasov, A.S. Resonant-frequency properties of low-dimensional junction of semiconductor-metal-semiconductor and calculation methodology // Journal of Physics: Conference Series. - 2019. - Volume 1384. - Issue 1. - Номер статьи 012002 https://www.scopus.com/record/display.uri?eid=2-s2.0-85077954308&origin=resultslist&sort=plf-f&src=s&st1=Resonant-frequency+properties+of+low-dimensional+junction+of+semiconductor-metal-semiconductor+and+calculation+methodology&st2=&sid=06bfe297a5d6aa23ab9ecf239eeb9ff0&sot=b&sdt=b&sl=137&s=TITLE-ABS-KEY%28Resonant-frequency+properties+of+low-dimensional+junction+of+semiconductor-metal-semiconductor+and+calculation+methodology%29&relpos=0&citeCnt=0&searchTerm= http://hdl.handle.net/20.500.12258/11217 en Journal of Physics: Conference Series application/pdf Institute of Physics Publishing
institution	СКФУ
collection	Репозиторий
language	English
topic	Semiconducting silicon compounds Silver compounds Research laboratories Metals Natural frequencies Ohmic contacts Quality control
spellingShingle	Semiconducting silicon compounds Silver compounds Research laboratories Metals Natural frequencies Ohmic contacts Quality control Valyukhov, D. P. Валюхов, Д. П. Baklanov, I. S. Бакланов, И. С. Shtab, E. V. Штаб, Э. В. Shtab, A. V. Штаб, А. В. Pigulev, R. V. Пигулев, Р. В. Iliasov, A. S. Ильясов, А. Ш. Resonant-frequency properties of low-dimensional junction of semiconductor-metal-semiconductor and calculation methodology
description	The article describes frequency characteristics of semiconductor-metal-semiconductor Si-Ag-Si structures (ohmic contacts) having metal nanolayers as well as features of resonance phenomenon and sandwich structure energy interaction. Mathematical simulation of mentioned above processes is provided. The limiting factor for resonance process is determined. It is found that the resonance frequency is a subject of semiconductor-metal junction parameters while metal layer thickness impact is minor
format	Статья
author	Valyukhov, D. P. Валюхов, Д. П. Baklanov, I. S. Бакланов, И. С. Shtab, E. V. Штаб, Э. В. Shtab, A. V. Штаб, А. В. Pigulev, R. V. Пигулев, Р. В. Iliasov, A. S. Ильясов, А. Ш.
author_facet	Valyukhov, D. P. Валюхов, Д. П. Baklanov, I. S. Бакланов, И. С. Shtab, E. V. Штаб, Э. В. Shtab, A. V. Штаб, А. В. Pigulev, R. V. Пигулев, Р. В. Iliasov, A. S. Ильясов, А. Ш.
author_sort	Valyukhov, D. P.
title	Resonant-frequency properties of low-dimensional junction of semiconductor-metal-semiconductor and calculation methodology
title_short	Resonant-frequency properties of low-dimensional junction of semiconductor-metal-semiconductor and calculation methodology
title_full	Resonant-frequency properties of low-dimensional junction of semiconductor-metal-semiconductor and calculation methodology
title_fullStr	Resonant-frequency properties of low-dimensional junction of semiconductor-metal-semiconductor and calculation methodology
title_full_unstemmed	Resonant-frequency properties of low-dimensional junction of semiconductor-metal-semiconductor and calculation methodology
title_sort	resonant-frequency properties of low-dimensional junction of semiconductor-metal-semiconductor and calculation methodology
publisher	Institute of Physics Publishing
publishDate	2020
url	https://www.scopus.com/record/display.uri?eid=2-s2.0-85077954308&origin=resultslist&sort=plf-f&src=s&st1=Resonant-frequency+properties+of+low-dimensional+junction+of+semiconductor-metal-semiconductor+and+calculation+methodology&st2=&sid=06bfe297a5d6aa23ab9ecf239eeb9ff0&sot=b&sdt=b&sl=137&s=TITLE-ABS-KEY%28Resonant-frequency+properties+of+low-dimensional+junction+of+semiconductor-metal-semiconductor+and+calculation+methodology%29&relpos=0&citeCnt=0&searchTerm= https://dspace.ncfu.ru/handle/20.500.12258/11217
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Resonant-frequency properties of low-dimensional junction of semiconductor-metal-semiconductor and calculation methodology

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