Resonant-frequency properties of low-dimensional junction of semiconductor-metal-semiconductor and calculation methodology

Resonant-frequency properties of low-dimensional junction of semiconductor-metal-semiconductor and calculation methodology

The article describes frequency characteristics of semiconductor-metal-semiconductor Si-Ag-Si structures (ohmic contacts) having metal nanolayers as well as features of resonance phenomenon and sandwich structure energy interaction. Mathematical simulation of mentioned above processes is provided. T...

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Hlavní autoři:	Valyukhov, D. P., Валюхов, Д. П., Baklanov, I. S., Бакланов, И. С., Shtab, E. V., Штаб, Э. В., Shtab, A. V., Штаб, А. В., Pigulev, R. V., Пигулев, Р. В., Iliasov, A. S., Ильясов, А. Ш.
Médium:	Статья
Jazyk:	English
Vydáno:	Institute of Physics Publishing 2020
Témata:	Semiconducting silicon compounds Silver compounds Research laboratories Metals Natural frequencies Ohmic contacts Quality control
On-line přístup:	https://www.scopus.com/record/display.uri?eid=2-s2.0-85077954308&origin=resultslist&sort=plf-f&src=s&st1=Resonant-frequency+properties+of+low-dimensional+junction+of+semiconductor-metal-semiconductor+and+calculation+methodology&st2=&sid=06bfe297a5d6aa23ab9ecf239eeb9ff0&sot=b&sdt=b&sl=137&s=TITLE-ABS-KEY%28Resonant-frequency+properties+of+low-dimensional+junction+of+semiconductor-metal-semiconductor+and+calculation+methodology%29&relpos=0&citeCnt=0&searchTerm= https://dspace.ncfu.ru/handle/20.500.12258/11217
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