Calculation of the temperature behavior features of electrical conductivity in GeTe, SnTe and A(x-1) B(x) C semiconductors - Solutions of Tc near-structural phase transition

Temperature behavior calculation of the anomalous conductivity of the A4B6-type ferroelectric semiconductors (GeTe, SnTe and A(x-1) B(x)C) of Tc near-phase transitions is carried out in the paper. The proposed integrable (analytical) model is applicable both for describing the temperature behavior o...

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主要な著者:	Sankin, A. V., Санкин, А. В., Altukhov, V. I., Алтухов, В. И.
フォーマット:	Статья
言語:	English
出版事項:	IOP Publishing Ltd 2021
主題:	IV-VI semiconductors Tin alloys Semiconducting tin compounds Semiconducting tellurium compounds Semiconducting germanium compounds Narrow band gap semiconductors Magnetic semiconductors
オンライン･アクセス:	https://dspace.ncfu.ru/handle/20.500.12258/18273
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spelling	ir-20.500.12258-182732021-11-16T10:11:57Z Calculation of the temperature behavior features of electrical conductivity in GeTe, SnTe and A(x-1) B(x) C semiconductors - Solutions of Tc near-structural phase transition Sankin, A. V. Санкин, А. В. Altukhov, V. I. Алтухов, В. И. IV-VI semiconductors Tin alloys Semiconducting tin compounds Semiconducting tellurium compounds Semiconducting germanium compounds Narrow band gap semiconductors Magnetic semiconductors Temperature behavior calculation of the anomalous conductivity of the A4B6-type ferroelectric semiconductors (GeTe, SnTe and A(x-1) B(x)C) of Tc near-phase transitions is carried out in the paper. The proposed integrable (analytical) model is applicable both for describing the temperature behavior of the conductivity of GeTe multivalley semiconductors and SnTe-type systems. The influence of the structural phase transition on the systems' conductivity is analyzed. The proposed analytical model of the conductivity behavior of ferroelectrics-semiconductors allows considering compounds with various spectra and compositions. The model is applicable both for the kinetic properties of multivalley semiconductors and for analyzing the effect of external influences on these properties: x composition and T temperature, as well as the presence of a structural phase transition in the system at Tc(x). It is shown that the graph can have the form of a break or the form of a smooth asymmetric maximum, depending on the value of the effective relaxation rate of carriers on soft phonons and the intervalley splitting of the anomalous conductivity near Tc in A4B6 systems. The calculation results are consistent with the experimental data. The dependence of the phase transition temperature Tc(x) on x composition is obtained. 2021-11-16T10:10:53Z 2021-11-16T10:10:53Z 2021 Статья Sankin, A. V., Altukhov, V. I., Elimkhanov, D. Z. Calculation of the temperature behavior features of electrical conductivity in GeTe, SnTe and A(x-1) B(x) C semiconductors - Solutions of Tc near-structural phase transition // Journal of Physics: Conference Series. - 2021. - Том 2032. - Выпуск 118. - Номер статьи 012037. - DOI10.1088/1742-6596/2032/1/012037 http://hdl.handle.net/20.500.12258/18273 en Journal of Physics: Conference Series application/pdf IOP Publishing Ltd
institution	СКФУ
collection	Репозиторий
language	English
topic	IV-VI semiconductors Tin alloys Semiconducting tin compounds Semiconducting tellurium compounds Semiconducting germanium compounds Narrow band gap semiconductors Magnetic semiconductors
spellingShingle	IV-VI semiconductors Tin alloys Semiconducting tin compounds Semiconducting tellurium compounds Semiconducting germanium compounds Narrow band gap semiconductors Magnetic semiconductors Sankin, A. V. Санкин, А. В. Altukhov, V. I. Алтухов, В. И. Calculation of the temperature behavior features of electrical conductivity in GeTe, SnTe and A(x-1) B(x) C semiconductors - Solutions of Tc near-structural phase transition
description	Temperature behavior calculation of the anomalous conductivity of the A4B6-type ferroelectric semiconductors (GeTe, SnTe and A(x-1) B(x)C) of Tc near-phase transitions is carried out in the paper. The proposed integrable (analytical) model is applicable both for describing the temperature behavior of the conductivity of GeTe multivalley semiconductors and SnTe-type systems. The influence of the structural phase transition on the systems' conductivity is analyzed. The proposed analytical model of the conductivity behavior of ferroelectrics-semiconductors allows considering compounds with various spectra and compositions. The model is applicable both for the kinetic properties of multivalley semiconductors and for analyzing the effect of external influences on these properties: x composition and T temperature, as well as the presence of a structural phase transition in the system at Tc(x). It is shown that the graph can have the form of a break or the form of a smooth asymmetric maximum, depending on the value of the effective relaxation rate of carriers on soft phonons and the intervalley splitting of the anomalous conductivity near Tc in A4B6 systems. The calculation results are consistent with the experimental data. The dependence of the phase transition temperature Tc(x) on x composition is obtained.
format	Статья
author	Sankin, A. V. Санкин, А. В. Altukhov, V. I. Алтухов, В. И.
author_facet	Sankin, A. V. Санкин, А. В. Altukhov, V. I. Алтухов, В. И.
author_sort	Sankin, A. V.
title	Calculation of the temperature behavior features of electrical conductivity in GeTe, SnTe and A(x-1) B(x) C semiconductors - Solutions of Tc near-structural phase transition
title_short	Calculation of the temperature behavior features of electrical conductivity in GeTe, SnTe and A(x-1) B(x) C semiconductors - Solutions of Tc near-structural phase transition
title_full	Calculation of the temperature behavior features of electrical conductivity in GeTe, SnTe and A(x-1) B(x) C semiconductors - Solutions of Tc near-structural phase transition
title_fullStr	Calculation of the temperature behavior features of electrical conductivity in GeTe, SnTe and A(x-1) B(x) C semiconductors - Solutions of Tc near-structural phase transition
title_full_unstemmed	Calculation of the temperature behavior features of electrical conductivity in GeTe, SnTe and A(x-1) B(x) C semiconductors - Solutions of Tc near-structural phase transition
title_sort	calculation of the temperature behavior features of electrical conductivity in gete, snte and a(x-1) b(x) c semiconductors - solutions of tc near-structural phase transition
publisher	IOP Publishing Ltd
publishDate	2021
url	https://dspace.ncfu.ru/handle/20.500.12258/18273
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Calculation of the temperature behavior features of electrical conductivity in GeTe, SnTe and A(x-1) B(x) C semiconductors - Solutions of Tc near-structural phase transition

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