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Influence of coating thickness on the microstructure, composition and optical properties of aluminum nitride thin films grown on silicon substrates via low-temperature PEALD

Within the framework of the study, fine-grained nanocrystalline aluminum nitride films were obtained using the PEALD method at the temperature of 250 degrees C and the number of deposition cycles from 80 to 500 on single-crystal silicon substrates. Low-temperature synthesis processes were carried ou...

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Auteurs principaux: Ambartsumov, M. G., Амбарцумов, М. Г., Tarala, V. A., Тарала, В. А., Nikova, M. S., Никова, М. С., Krandievsky, S. O., Крандиевский, С. О.
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Langue:English
Publié: Elsevier Ltd 2021
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Accès en ligne:https://dspace.ncfu.ru/handle/20.500.12258/18458
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spelling ir-20.500.12258-184582022-01-24T07:31:20Z Influence of coating thickness on the microstructure, composition and optical properties of aluminum nitride thin films grown on silicon substrates via low-temperature PEALD Ambartsumov, M. G. Амбарцумов, М. Г. Tarala, V. A. Тарала, В. А. Nikova, M. S. Никова, М. С. Krandievsky, S. O. Крандиевский, С. О. X-ray diffraction Spectroscopy Plasma-enhanced atomic layer deposition Microstructure Aluminum nitride Ellipsometry Within the framework of the study, fine-grained nanocrystalline aluminum nitride films were obtained using the PEALD method at the temperature of 250 degrees C and the number of deposition cycles from 80 to 500 on single-crystal silicon substrates. Low-temperature synthesis processes were carried out in the self-limited growth regime of the PEALD method at the constant growth rate of similar to 0.115 nm/cycle. The obtained samples were studied by ellipsometry, FTIR-spectroscopy, X-ray diffraction analysis, Auger spectroscopy, Scanning electron and Atomic force microscopy. It was found that the samples in the IR-absorption spectra and omega/2 theta-scans had bands and reflections characteristic for wurtzite AlN with hexagonal structure. It was shown that an increase in the coating thickness led to an increase in the crystallinity and optical density of the film material, the crystallites size, and values of the root-mean-square (RMS) roughness. In this case, significant changes in the crystal lattice parameter and relaxation of internal mechanical stresses within the obtained values of the AlN layers thicknesses were not observed. 2021-11-30T10:21:40Z 2021-11-30T10:21:40Z 2021 Статья Ambartsumov, M. G., Tarala, V. A., Nikova, M. S., Krandievsky, S. O. Influence of coating thickness on the microstructure, composition and optical properties of aluminum nitride thin films grown on silicon substrates via low-temperature PEALD // SURFACES AND INTERFACES. - 2021. - Том 27. - Номер статьи 101559. - DOI10.1016/j.surfin.2021.101559 http://hdl.handle.net/20.500.12258/18458 en SURFACES AND INTERFACES application/pdf application/pdf Elsevier Ltd
institution СКФУ
collection Репозиторий
language English
topic X-ray diffraction
Spectroscopy
Plasma-enhanced atomic layer deposition
Microstructure
Aluminum nitride
Ellipsometry
spellingShingle X-ray diffraction
Spectroscopy
Plasma-enhanced atomic layer deposition
Microstructure
Aluminum nitride
Ellipsometry
Ambartsumov, M. G.
Амбарцумов, М. Г.
Tarala, V. A.
Тарала, В. А.
Nikova, M. S.
Никова, М. С.
Krandievsky, S. O.
Крандиевский, С. О.
Influence of coating thickness on the microstructure, composition and optical properties of aluminum nitride thin films grown on silicon substrates via low-temperature PEALD
description Within the framework of the study, fine-grained nanocrystalline aluminum nitride films were obtained using the PEALD method at the temperature of 250 degrees C and the number of deposition cycles from 80 to 500 on single-crystal silicon substrates. Low-temperature synthesis processes were carried out in the self-limited growth regime of the PEALD method at the constant growth rate of similar to 0.115 nm/cycle. The obtained samples were studied by ellipsometry, FTIR-spectroscopy, X-ray diffraction analysis, Auger spectroscopy, Scanning electron and Atomic force microscopy. It was found that the samples in the IR-absorption spectra and omega/2 theta-scans had bands and reflections characteristic for wurtzite AlN with hexagonal structure. It was shown that an increase in the coating thickness led to an increase in the crystallinity and optical density of the film material, the crystallites size, and values of the root-mean-square (RMS) roughness. In this case, significant changes in the crystal lattice parameter and relaxation of internal mechanical stresses within the obtained values of the AlN layers thicknesses were not observed.
format Статья
author Ambartsumov, M. G.
Амбарцумов, М. Г.
Tarala, V. A.
Тарала, В. А.
Nikova, M. S.
Никова, М. С.
Krandievsky, S. O.
Крандиевский, С. О.
author_facet Ambartsumov, M. G.
Амбарцумов, М. Г.
Tarala, V. A.
Тарала, В. А.
Nikova, M. S.
Никова, М. С.
Krandievsky, S. O.
Крандиевский, С. О.
author_sort Ambartsumov, M. G.
title Influence of coating thickness on the microstructure, composition and optical properties of aluminum nitride thin films grown on silicon substrates via low-temperature PEALD
title_short Influence of coating thickness on the microstructure, composition and optical properties of aluminum nitride thin films grown on silicon substrates via low-temperature PEALD
title_full Influence of coating thickness on the microstructure, composition and optical properties of aluminum nitride thin films grown on silicon substrates via low-temperature PEALD
title_fullStr Influence of coating thickness on the microstructure, composition and optical properties of aluminum nitride thin films grown on silicon substrates via low-temperature PEALD
title_full_unstemmed Influence of coating thickness on the microstructure, composition and optical properties of aluminum nitride thin films grown on silicon substrates via low-temperature PEALD
title_sort influence of coating thickness on the microstructure, composition and optical properties of aluminum nitride thin films grown on silicon substrates via low-temperature peald
publisher Elsevier Ltd
publishDate 2021
url https://dspace.ncfu.ru/handle/20.500.12258/18458
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