Structure and morphology of GaInAsP solid solutions on GaAs substrates grown by pulsed laser deposition

GaInAsP solid solutions are synthesized on GaAs substrates by pulsed laser deposition and the effect of the laser fluence on the morphology and structure of the films is studied. It is found that the surface of the films is textured with In microdroplets. It is established that an increase in the la...

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Главные авторы:	Pashchenko, A. S., Пащенко, А. С., Devitsky, O. V., Девицкий, О. В., Lunin, L. S., Лунин, Л. С., Kasyanov, I. V., Касьянов, И. В., Nikulin, D. A., Никулин, Д. А.
格式:	Статья
語言:	English
出版:	Elsevier B.V. 2022
主題:	Semiconducting quaternary alloys Solid solutions III–V compounds X-ray diffraction Heterostructures Pulsed laser deposition
在線閱讀:	https://dspace.ncfu.ru/handle/20.500.12258/18561
標簽:	添加標簽沒有標簽, 成為第一個標記此記錄!

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spelling	ir-20.500.12258-185612022-01-10T14:06:46Z Structure and morphology of GaInAsP solid solutions on GaAs substrates grown by pulsed laser deposition Pashchenko, A. S. Пащенко, А. С. Devitsky, O. V. Девицкий, О. В. Lunin, L. S. Лунин, Л. С. Kasyanov, I. V. Касьянов, И. В. Nikulin, D. A. Никулин, Д. А. Semiconducting quaternary alloys Solid solutions III–V compounds X-ray diffraction Heterostructures Pulsed laser deposition GaInAsP solid solutions are synthesized on GaAs substrates by pulsed laser deposition and the effect of the laser fluence on the morphology and structure of the films is studied. It is found that the surface of the films is textured with In microdroplets. It is established that an increase in the laser fluence from 2.0 to 3.2 J/cm2 increases the average size of the In microdroplets from 0.4 to 1.4 µm, decreases their density from 0.22 to 0.02 µm−2 and also increases the root-mean-square surface roughness of the GaInAsP films from 0.24 to 0.34 nm. The GaInAsP films contain structural defects in the form of misfit dislocations. X-ray diffraction and atomic force microscopy show that the film growth occurs in two stages, with island growth transforming into a quasi-layer-by-layer growth mode. The structural properties and phase composition of the target and GaInAsP films are studied. X-ray diffraction and Raman spectroscopy results indicate the inhomogeneity of the phase composition and the predominance of the short-range order of chemical bonds in the synthesized GaInAsP solid solutions on the GaAs substrates. 2022-01-10T14:03:53Z 2022-01-10T14:03:53Z 2022 Статья Pashchenko, A. S., Devitsky, O. V., Lunin, L. S., Kasyanov I. V., Nikulin, D. A., Pashchenko, O. S. Structure and morphology of GaInAsP solid solutions on GaAs substrates grown by pulsed laser deposition // Thin Solid Films. - 2022. - Том 743. - Номер статьи 139064. - DOI10.1016/j.tsf.2021.139064 http://hdl.handle.net/20.500.12258/18561 en Thin Solid Films application/pdf Elsevier B.V.
institution	СКФУ
collection	Репозиторий
language	English
topic	Semiconducting quaternary alloys Solid solutions III–V compounds X-ray diffraction Heterostructures Pulsed laser deposition
spellingShingle	Semiconducting quaternary alloys Solid solutions III–V compounds X-ray diffraction Heterostructures Pulsed laser deposition Pashchenko, A. S. Пащенко, А. С. Devitsky, O. V. Девицкий, О. В. Lunin, L. S. Лунин, Л. С. Kasyanov, I. V. Касьянов, И. В. Nikulin, D. A. Никулин, Д. А. Structure and morphology of GaInAsP solid solutions on GaAs substrates grown by pulsed laser deposition
description	GaInAsP solid solutions are synthesized on GaAs substrates by pulsed laser deposition and the effect of the laser fluence on the morphology and structure of the films is studied. It is found that the surface of the films is textured with In microdroplets. It is established that an increase in the laser fluence from 2.0 to 3.2 J/cm2 increases the average size of the In microdroplets from 0.4 to 1.4 µm, decreases their density from 0.22 to 0.02 µm−2 and also increases the root-mean-square surface roughness of the GaInAsP films from 0.24 to 0.34 nm. The GaInAsP films contain structural defects in the form of misfit dislocations. X-ray diffraction and atomic force microscopy show that the film growth occurs in two stages, with island growth transforming into a quasi-layer-by-layer growth mode. The structural properties and phase composition of the target and GaInAsP films are studied. X-ray diffraction and Raman spectroscopy results indicate the inhomogeneity of the phase composition and the predominance of the short-range order of chemical bonds in the synthesized GaInAsP solid solutions on the GaAs substrates.
format	Статья
author	Pashchenko, A. S. Пащенко, А. С. Devitsky, O. V. Девицкий, О. В. Lunin, L. S. Лунин, Л. С. Kasyanov, I. V. Касьянов, И. В. Nikulin, D. A. Никулин, Д. А.
author_facet	Pashchenko, A. S. Пащенко, А. С. Devitsky, O. V. Девицкий, О. В. Lunin, L. S. Лунин, Л. С. Kasyanov, I. V. Касьянов, И. В. Nikulin, D. A. Никулин, Д. А.
author_sort	Pashchenko, A. S.
title	Structure and morphology of GaInAsP solid solutions on GaAs substrates grown by pulsed laser deposition
title_short	Structure and morphology of GaInAsP solid solutions on GaAs substrates grown by pulsed laser deposition
title_full	Structure and morphology of GaInAsP solid solutions on GaAs substrates grown by pulsed laser deposition
title_fullStr	Structure and morphology of GaInAsP solid solutions on GaAs substrates grown by pulsed laser deposition
title_full_unstemmed	Structure and morphology of GaInAsP solid solutions on GaAs substrates grown by pulsed laser deposition
title_sort	structure and morphology of gainasp solid solutions on gaas substrates grown by pulsed laser deposition
publisher	Elsevier B.V.
publishDate	2022
url	https://dspace.ncfu.ru/handle/20.500.12258/18561
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Structure and morphology of GaInAsP solid solutions on GaAs substrates grown by pulsed laser deposition

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