Study of the composition of GaAs1-yBiy films obtained by pulsed laser deposition
Uniaxial cold pressing was used to fabricate the GaAs1-yBiy targets with the Bi content of 1 and 22 %. From the obtained targets, pulsed laser deposition of GaAs1-yBiy thin films on the GaAs and Si substrates was carried out for the first time. We studied the composition, Raman and PL spectra of thi...
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TVER STATE UNIV
2022
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ir-20.500.12258-191492022-03-01T07:22:56Z Study of the composition of GaAs1-yBiy films obtained by pulsed laser deposition Devitsky, O. V. Девицкий, О. В. Kravtsov, A. A. Кравцов, А. А. Sysoev, I. A. Сысоев, И. А. GaAs1-yBiy Thin films Pulsed laser deposition Raman light scattering Photoluminescence Uniaxial cold pressing was used to fabricate the GaAs1-yBiy targets with the Bi content of 1 and 22 %. From the obtained targets, pulsed laser deposition of GaAs1-yBiy thin films on the GaAs and Si substrates was carried out for the first time. We studied the composition, Raman and PL spectra of thin GaAs1-yBiy films obtained from targets with 1 and 22 % of Bi. According to the photoluminescence spectra of thin GaAs1-yBiy films on GaAs substrates, it was determined that the maximum content of Bi in the films did not exceed 2,7 %. The results obtained well correlate with the results of the energy dispersive analysis, the composition of films obtained from targets with the Bi content of 1 and 22 % - GaAs0,975 Bi-0,Bi-025 and GaAs0,973Bi0,027. It was found that the LO (GaBi) phonon mode of associated with disordering during mixing of GaAs and GaBi phases to be at a frequency of 181 cm(-1). For the thin film obtained on the Si substrate, the mode LO (GaAs) was observed that was less pronounced and shifted by 3 cm(-1) to the left, while the mode TO (GaAs), forbidden by the selection rules, had a higher intensity and its shift was of about 1 cm(-1) relative to the frequency of the mode TO (GaAs) of the thin film obtained on the GaAs substrate. 2022-03-01T07:21:54Z 2022-03-01T07:21:54Z 2021 Статья Devitsky, O. V., Kravtsov, A. A., Sysoev, I. A. Study of the composition of GaAs1-yBiy films obtained by pulsed laser deposition // PHYSICAL AND CHEMICAL ASPECTS OF THE STUDY OF CLUSTERS NANOSTRUCTURES AND NANOMATERIALS. - 2021. - Issue 13. - Page 96-105. - DOI10.26456/pcascnn/2021.13.096 http://hdl.handle.net/20.500.12258/19149 en PHYSICAL AND CHEMICAL ASPECTS OF THE STUDY OF CLUSTERS NANOSTRUCTURES AND NANOMATERIALS application/pdf TVER STATE UNIV |
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СКФУ |
| collection |
Репозиторий |
| language |
English |
| topic |
GaAs1-yBiy Thin films Pulsed laser deposition Raman light scattering Photoluminescence |
| spellingShingle |
GaAs1-yBiy Thin films Pulsed laser deposition Raman light scattering Photoluminescence Devitsky, O. V. Девицкий, О. В. Kravtsov, A. A. Кравцов, А. А. Sysoev, I. A. Сысоев, И. А. Study of the composition of GaAs1-yBiy films obtained by pulsed laser deposition |
| description |
Uniaxial cold pressing was used to fabricate the GaAs1-yBiy targets with the Bi content of 1 and 22 %. From the obtained targets, pulsed laser deposition of GaAs1-yBiy thin films on the GaAs and Si substrates was carried out for the first time. We studied the composition, Raman and PL spectra of thin GaAs1-yBiy films obtained from targets with 1 and 22 % of Bi. According to the photoluminescence spectra of thin GaAs1-yBiy films on GaAs substrates, it was determined that the maximum content of Bi in the films did not exceed 2,7 %. The results obtained well correlate with the results of the energy dispersive analysis, the composition of films obtained from targets with the Bi content of 1 and 22 % - GaAs0,975 Bi-0,Bi-025 and GaAs0,973Bi0,027. It was found that the LO (GaBi) phonon mode of associated with disordering during mixing of GaAs and GaBi phases to be at a frequency of 181 cm(-1). For the thin film obtained on the Si substrate, the mode LO (GaAs) was observed that was less pronounced and shifted by 3 cm(-1) to the left, while the mode TO (GaAs), forbidden by the selection rules, had a higher intensity and its shift was of about 1 cm(-1) relative to the frequency of the mode TO (GaAs) of the thin film obtained on the GaAs substrate. |
| format |
Статья |
| author |
Devitsky, O. V. Девицкий, О. В. Kravtsov, A. A. Кравцов, А. А. Sysoev, I. A. Сысоев, И. А. |
| author_facet |
Devitsky, O. V. Девицкий, О. В. Kravtsov, A. A. Кравцов, А. А. Sysoev, I. A. Сысоев, И. А. |
| author_sort |
Devitsky, O. V. |
| title |
Study of the composition of GaAs1-yBiy films obtained by pulsed laser deposition |
| title_short |
Study of the composition of GaAs1-yBiy films obtained by pulsed laser deposition |
| title_full |
Study of the composition of GaAs1-yBiy films obtained by pulsed laser deposition |
| title_fullStr |
Study of the composition of GaAs1-yBiy films obtained by pulsed laser deposition |
| title_full_unstemmed |
Study of the composition of GaAs1-yBiy films obtained by pulsed laser deposition |
| title_sort |
study of the composition of gaas1-ybiy films obtained by pulsed laser deposition |
| publisher |
TVER STATE UNIV |
| publishDate |
2022 |
| url |
https://dspace.ncfu.ru/handle/20.500.12258/19149 |
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