Study of the composition of GaAs1-yBiy films obtained by pulsed laser deposition
Uniaxial cold pressing was used to fabricate the GaAs1-yBiy targets with the Bi content of 1 and 22 %. From the obtained targets, pulsed laser deposition of GaAs1-yBiy thin films on the GaAs and Si substrates was carried out for the first time. We studied the composition, Raman and PL spectra of thi...
Saved in:
Main Authors: | Devitsky, O. V., Девицкий, О. В., Kravtsov, A. A., Кравцов, А. А., Sysoev, I. A., Сысоев, И. А. |
---|---|
Format: | Статья |
Language: | English |
Published: |
TVER STATE UNIV
2022
|
Subjects: | |
Online Access: | https://dspace.ncfu.ru/handle/20.500.12258/19149 |
Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
Similar Items
-
EFFECT OF BISMUTH CONTENT ON THE STRUCTURAL AND ELECTRONIC PROPERTIES OF GaAs1-yBiy: FIRST PRINCIPLES CALCULATIONS
by: Devitsky, O. V., et al.
Published: (2024) -
STRUCTURE AND COMPOSITION OF THIN GaAs1-x-yNxBiy FILMS PRODUCED BY PULSED LASER DEPOSITION
by: Devitsky, O. V., et al.
Published: (2023) -
Effect of nitrogen pressure on the composition and structure of thin films GaAs1 - x - yNxBiy
by: Devitsky, O. V., et al.
Published: (2024) -
Extreme environment wideband, high-efficiency photovoltaics based on new physical principles and hyperfast LPE GaAs power electronics
by: Saytiev, A. B., et al.
Published: (2019) -
Peculiarities of pulsed laser deposition of thin InGaAsN films in an active background gas atmosphere
by: Devitsky, O. V., et al.
Published: (2023)