Study of the composition of GaAs1-yBiy films obtained by pulsed laser deposition

Study of the composition of GaAs1-yBiy films obtained by pulsed laser deposition

Uniaxial cold pressing was used to fabricate the GaAs1-yBiy targets with the Bi content of 1 and 22 %. From the obtained targets, pulsed laser deposition of GaAs1-yBiy thin films on the GaAs and Si substrates was carried out for the first time. We studied the composition, Raman and PL spectra of thi...

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Главные авторы:	Devitsky, O. V., Девицкий, О. В., Kravtsov, A. A., Кравцов, А. А., Sysoev, I. A., Сысоев, И. А.
格式:	Статья
语言:	English
出版:	TVER STATE UNIV 2022
主题:	GaAs1-yBiy Thin films Pulsed laser deposition Raman light scattering Photoluminescence
在线阅读:	https://dspace.ncfu.ru/handle/20.500.12258/19149
标签:	添加标签没有标签, 成为第一个标记此记录!

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