Thin SiС and gan-based films and structures: production and properties

The article describes the methods for producing thin films and structures based on SiC, GaN and their SiC – AlN and Al – GaN solid solutions, as well as mathematical models of film growth and properties-behavior of the I–V characteristics of heterostructures. Two models were developed for producing...

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Главные авторы:	Sankin, A. V., Санкин, А. В., Altukhov, V. I., Алтухов, В. И.
Формат:	Статья
Язык:	English
Опубликовано:	Trans Tech Publications Ltd 2022
Темы:	Aln Sic Heterostructures Mathematical models Thin sic Gan
Online-ссылка:	https://dspace.ncfu.ru/handle/20.500.12258/19425
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record_format	dspace
spelling	ir-20.500.12258-194252022-04-13T09:25:30Z Thin SiС and gan-based films and structures: production and properties Sankin, A. V. Санкин, А. В. Altukhov, V. I. Алтухов, В. И. Aln Sic Heterostructures Mathematical models Thin sic Gan The article describes the methods for producing thin films and structures based on SiC, GaN and their SiC – AlN and Al – GaN solid solutions, as well as mathematical models of film growth and properties-behavior of the I–V characteristics of heterostructures. Two models were developed for producing thin films and heterostructures based on SiC, GaN and their solid solutions. The first model makes it possible to determine the sputtering coefficient when producing films by high-frequency magnetron sputtering. In the second quantum-mechanical model, the equation for the gap of the mean field of condensate was built and the growth rate of a film on the crystalline substrate was determined. The current-voltage characteristic of the transistor based on the AlGaN / GaN heterosystem was provided. The models for the growth of heterostructure films made it possible to modify the technologies for producing perfect SiC crystals and SiC – AlN solid solutions. It was possible to offer a pilot plant for growing SiC crystals with improved control over the modes of induction high-temperature heating of the growth crucible. 2022-04-13T09:24:47Z 2022-04-13T09:24:47Z 2022 Статья Sankin, A. V., Altukhov, V. I., Dadasheva, Z. I. Thin SiС and gan-based films and structures: production and properties // Key Engineering Materials. - 2022. - Том 909 KEM. - Стр.: 156 - 161. - DOI10.4028/p-uvvw11 http://hdl.handle.net/20.500.12258/19425 en Key Engineering Materials application/pdf Trans Tech Publications Ltd
institution	СКФУ
collection	Репозиторий
language	English
topic	Aln Sic Heterostructures Mathematical models Thin sic Gan
spellingShingle	Aln Sic Heterostructures Mathematical models Thin sic Gan Sankin, A. V. Санкин, А. В. Altukhov, V. I. Алтухов, В. И. Thin SiС and gan-based films and structures: production and properties
description	The article describes the methods for producing thin films and structures based on SiC, GaN and their SiC – AlN and Al – GaN solid solutions, as well as mathematical models of film growth and properties-behavior of the I–V characteristics of heterostructures. Two models were developed for producing thin films and heterostructures based on SiC, GaN and their solid solutions. The first model makes it possible to determine the sputtering coefficient when producing films by high-frequency magnetron sputtering. In the second quantum-mechanical model, the equation for the gap of the mean field of condensate was built and the growth rate of a film on the crystalline substrate was determined. The current-voltage characteristic of the transistor based on the AlGaN / GaN heterosystem was provided. The models for the growth of heterostructure films made it possible to modify the technologies for producing perfect SiC crystals and SiC – AlN solid solutions. It was possible to offer a pilot plant for growing SiC crystals with improved control over the modes of induction high-temperature heating of the growth crucible.
format	Статья
author	Sankin, A. V. Санкин, А. В. Altukhov, V. I. Алтухов, В. И.
author_facet	Sankin, A. V. Санкин, А. В. Altukhov, V. I. Алтухов, В. И.
author_sort	Sankin, A. V.
title	Thin SiС and gan-based films and structures: production and properties
title_short	Thin SiС and gan-based films and structures: production and properties
title_full	Thin SiС and gan-based films and structures: production and properties
title_fullStr	Thin SiС and gan-based films and structures: production and properties
title_full_unstemmed	Thin SiС and gan-based films and structures: production and properties
title_sort	thin siс and gan-based films and structures: production and properties
publisher	Trans Tech Publications Ltd
publishDate	2022
url	https://dspace.ncfu.ru/handle/20.500.12258/19425
work_keys_str_mv	AT sankinav thinsisandganbasedfilmsandstructuresproductionandproperties AT sankinav thinsisandganbasedfilmsandstructuresproductionandproperties AT altukhovvi thinsisandganbasedfilmsandstructuresproductionandproperties AT altuhovvi thinsisandganbasedfilmsandstructuresproductionandproperties
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Thin SiС and gan-based films and structures: production and properties

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