Пропуск в контексте

PLD growth of InGaAsP nanowires: morphology surface and structural property

Nanowires of III - V solid solutions hold promise for use in optoelectronics and photovoltaics, for example, as functional coatings for solar cells. InGaAsP nanowires were grown on GaAs and Si substrates by pulsed laser deposition. The dependences of the orientation of nanowires on the substrate tem...

全面介绍

Сохранить в:
书目详细资料
Главные авторы: Sysoev, I. A., Сысоев, И. А., Kononov, Y. G., Кононов, Ю. Г., Zakharov, A. A., Захаров, А. А., Mitrofanov, D. V., Митрофанов, Д. В.
格式: Статья
语言:English
出版: Institute of Electrical and Electronics Engineers Inc. 2022
主题:
在线阅读:https://dspace.ncfu.ru/handle/20.500.12258/19592
标签: 添加标签
没有标签, 成为第一个标记此记录!