Influence of argon pressure on the surface morphology of thin InGaAsP/Si films

The thin films of InGaAsP/Si were obtained by pulsed laser deposition at different argon pressures. The InGaAsP/Si films obtained at an argon pressure of 10 Pa have the highest roughness, and the smallest are films obtained in a vacuum. In PLD in argon, atoms are scattered on the substrate at differ...

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Hauptverfasser:	Devitsky, O. V., Девицкий, О. В.
Format:	Статья
Sprache:	English
Veröffentlicht:	American Institute of Physics Inc. 2022
Schlagworte:	Morphology of thin InGaAsP/Si films Argon pressure
Online Zugang:	https://dspace.ncfu.ru/handle/20.500.12258/21198
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record_format	dspace
spelling	ir-20.500.12258-211982022-09-15T08:47:59Z Influence of argon pressure on the surface morphology of thin InGaAsP/Si films Devitsky, O. V. Девицкий, О. В. Morphology of thin InGaAsP/Si films Argon pressure The thin films of InGaAsP/Si were obtained by pulsed laser deposition at different argon pressures. The InGaAsP/Si films obtained at an argon pressure of 10 Pa have the highest roughness, and the smallest are films obtained in a vacuum. In PLD in argon, atoms are scattered on the substrate at different angles due to scattering, a developed relief is formed on the surface as a result of the shadow effect, and the coatings can become loose. The shadow effect is because the atoms incident at an angle to the surface cannot enter the zones lying outside the «line of sight», formed behind the already grown irregularities and elements of the coating relief. The morphology of such films is well described within the framework of the model, as well as the «mounded» surface. 2022-09-15T08:47:24Z 2022-09-15T08:47:24Z 2022 Статья Devitsky, O.V. Influence of argon pressure on the surface morphology of thin InGaAsP/Si films // AIP Conference Proceedings. - 2022. - Том 2466. - Номер статьи 030002. - DOI10.1063/5.0088641 http://hdl.handle.net/20.500.12258/21198 en AIP Conference Proceedings application/pdf American Institute of Physics Inc.
institution	СКФУ
collection	Репозиторий
language	English
topic	Morphology of thin InGaAsP/Si films Argon pressure
spellingShingle	Morphology of thin InGaAsP/Si films Argon pressure Devitsky, O. V. Девицкий, О. В. Influence of argon pressure on the surface morphology of thin InGaAsP/Si films
description	The thin films of InGaAsP/Si were obtained by pulsed laser deposition at different argon pressures. The InGaAsP/Si films obtained at an argon pressure of 10 Pa have the highest roughness, and the smallest are films obtained in a vacuum. In PLD in argon, atoms are scattered on the substrate at different angles due to scattering, a developed relief is formed on the surface as a result of the shadow effect, and the coatings can become loose. The shadow effect is because the atoms incident at an angle to the surface cannot enter the zones lying outside the «line of sight», formed behind the already grown irregularities and elements of the coating relief. The morphology of such films is well described within the framework of the model, as well as the «mounded» surface.
format	Статья
author	Devitsky, O. V. Девицкий, О. В.
author_facet	Devitsky, O. V. Девицкий, О. В.
author_sort	Devitsky, O. V.
title	Influence of argon pressure on the surface morphology of thin InGaAsP/Si films
title_short	Influence of argon pressure on the surface morphology of thin InGaAsP/Si films
title_full	Influence of argon pressure on the surface morphology of thin InGaAsP/Si films
title_fullStr	Influence of argon pressure on the surface morphology of thin InGaAsP/Si films
title_full_unstemmed	Influence of argon pressure on the surface morphology of thin InGaAsP/Si films
title_sort	influence of argon pressure on the surface morphology of thin ingaasp/si films
publisher	American Institute of Physics Inc.
publishDate	2022
url	https://dspace.ncfu.ru/handle/20.500.12258/21198
work_keys_str_mv	AT devitskyov influenceofargonpressureonthesurfacemorphologyofthiningaaspsifilms AT devickijov influenceofargonpressureonthesurfacemorphologyofthiningaaspsifilms
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Influence of argon pressure on the surface morphology of thin InGaAsP/Si films

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