Influence of argon pressure on the surface morphology of thin InGaAsP/Si films

Influence of argon pressure on the surface morphology of thin InGaAsP/Si films

The thin films of InGaAsP/Si were obtained by pulsed laser deposition at different argon pressures. The InGaAsP/Si films obtained at an argon pressure of 10 Pa have the highest roughness, and the smallest are films obtained in a vacuum. In PLD in argon, atoms are scattered on the substrate at differ...

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Những tác giả chính:	Devitsky, O. V., Девицкий, О. В.
Định dạng:	Статья
Ngôn ngữ:	English
Được phát hành:	American Institute of Physics Inc. 2022
Những chủ đề:	Morphology of thin InGaAsP/Si films Argon pressure
Truy cập trực tuyến:	https://dspace.ncfu.ru/handle/20.500.12258/21198
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