Influence of argon pressure on the surface morphology of thin InGaAsP/Si films
The thin films of InGaAsP/Si were obtained by pulsed laser deposition at different argon pressures. The InGaAsP/Si films obtained at an argon pressure of 10 Pa have the highest roughness, and the smallest are films obtained in a vacuum. In PLD in argon, atoms are scattered on the substrate at differ...
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| Päätekijät: | , |
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| Aineistotyyppi: | Статья |
| Kieli: | English |
| Julkaistu: |
American Institute of Physics Inc.
2022
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| Aiheet: | |
| Linkit: | https://dspace.ncfu.ru/handle/20.500.12258/21198 |
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