Peculiarities of pulsed laser deposition of thin InGaAsN films in an active background gas atmosphere
III-V-N compounds are a promising class of solid solutions that have the prospect of being used in optoelectronic devices operating in a wide spectral range up to 3 μm, as well as for increasing the efficiency of photodetectors, lasers in fiber-optic communication lines and telecommunication systems...
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| Hlavní autoři: | , |
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| Médium: | Статья |
| Jazyk: | English |
| Vydáno: |
2023
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| Témata: | |
| On-line přístup: | https://dspace.ncfu.ru/handle/20.500.12258/22307 |
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