Peculiarities of pulsed laser deposition of thin InGaAsN films in an active background gas atmosphere
III-V-N compounds are a promising class of solid solutions that have the prospect of being used in optoelectronic devices operating in a wide spectral range up to 3 μm, as well as for increasing the efficiency of photodetectors, lasers in fiber-optic communication lines and telecommunication systems...
में बचाया:
| मुख्य लेखकों: | , |
|---|---|
| स्वरूप: | Статья |
| भाषा: | English |
| प्रकाशित: |
2023
|
| विषय: | |
| ऑनलाइन पहुंच: | https://dspace.ncfu.ru/handle/20.500.12258/22307 |
| टैग : |
टैग जोड़ें
कोई टैग नहीं, इस रिकॉर्ड को टैग करने वाले पहले व्यक्ति बनें!
|