STRUCTURE AND COMPOSITION OF THIN GaAs1-x-yNxBiy FILMS PRODUCED BY PULSED LASER DEPOSITION

Uniaxial cold pressing was used to fabricate GaAs0,9Bi0,1 targets with 10% Bi content. Thin films of GaAs1-x-yNxBiy onto a GaAs (100) substrate were obtained from the formed GaAs0,9Bi0,1 target by pulsed laser deposition in an argon-nitrogen gas atmosphere, and their structure and composition were s...

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Главные авторы:	Devitsky, O. V., Девицкий, О. В.
Formato:	Статья
Idioma:	Russian
Publicado em:	2023
Assuntos:	Diluted nitrides diluted bismuthides III-V-N-Bi GaAs1-x-yNxBiy Thin films Pulsed laser deposition
Acesso em linha:	https://dspace.ncfu.ru/handle/20.500.12258/23459
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id	ir-20.500.12258-23459
record_format	dspace
spelling	ir-20.500.12258-234592023-05-05T11:32:25Z STRUCTURE AND COMPOSITION OF THIN GaAs1-x-yNxBiy FILMS PRODUCED BY PULSED LASER DEPOSITION СТРУКТУРА И СОСТАВ ТОНКИХ ПЛЕНОК GaAs1-x-yNxBiy, ПОЛУЧЕННЫХ МЕТОДОМ ИМПУЛЬСНОГО ЛАЗЕРНОГО НАПЫЛЕНИЯ Devitsky, O. V. Девицкий, О. В. Diluted nitrides diluted bismuthides III-V-N-Bi GaAs1-x-yNxBiy Thin films Pulsed laser deposition Uniaxial cold pressing was used to fabricate GaAs0,9Bi0,1 targets with 10% Bi content. Thin films of GaAs1-x-yNxBiy onto a GaAs (100) substrate were obtained from the formed GaAs0,9Bi0,1 target by pulsed laser deposition in an argon-nitrogen gas atmosphere, and their structure and composition were studied. It is shown that on the surface of the film there are predominantly small microdroplets with a diameter of less than 0,5 μm, formed by Bi atoms. Large microdroplets with a diameter of 2 to 6 μm consist partly of Bi and Ga. No microdroplets formed only from Ga were found. It is noted that small Ga microdroplets are adsorbed on the surface of large Bi microdroplets without forming a GaBi alloy. It was also found that the formation of Bi microdroplets also occurs due to the segregation of Bi atoms on the film surface. The energy-dispersive spectroscopy data make it possible to characterize the resulting thin films as GaAs0,995N0,015Bi0,03. The mean square roughness of the film surface was 12,2 nm. The resulting GaAs0,995N0,015Bi0,03 film has a polycrystalline structure. An analysis of the X-ray diffraction data showed that the film grew according to the Volmer-Weber law, when islands are nucleated and their sizes subsequently increase. The nuclei are most likely formed by GaAs, GaN, GaAsN, GaAsBi, and GaAsNBi. The calculated full width at half height for GaAs0,995N0,015Bi0,03 was – 0,8656ʺ, and the average crystallite size was 1,6 nm. 2023-05-05T11:31:55Z 2023-05-05T11:31:55Z 2022 Статья Devitsky, OV. STRUCTURE AND COMPOSITION OF THIN GaAs1-x-yNxBiy FILMS PRODUCED BY PULSED LASER DEPOSITION // PHYSICAL AND CHEMICAL ASPECTS OF THE STUDY OF CLUSTERS NANOSTRUCTURES AND NANOMATERIALS. - 2022. - 14, 593-601. - DOI: 10.26456/pcascnn/2022.14.593 http://hdl.handle.net/20.500.12258/23459 ru PHYSICAL AND CHEMICAL ASPECTS OF THE STUDY OF CLUSTERS NANOSTRUCTURES AND NANOMATERIALS application/pdf
institution	СКФУ
collection	Репозиторий
language	Russian
topic	Diluted nitrides diluted bismuthides III-V-N-Bi GaAs1-x-yNxBiy Thin films Pulsed laser deposition
spellingShingle	Diluted nitrides diluted bismuthides III-V-N-Bi GaAs1-x-yNxBiy Thin films Pulsed laser deposition Devitsky, O. V. Девицкий, О. В. STRUCTURE AND COMPOSITION OF THIN GaAs1-x-yNxBiy FILMS PRODUCED BY PULSED LASER DEPOSITION
description	Uniaxial cold pressing was used to fabricate GaAs0,9Bi0,1 targets with 10% Bi content. Thin films of GaAs1-x-yNxBiy onto a GaAs (100) substrate were obtained from the formed GaAs0,9Bi0,1 target by pulsed laser deposition in an argon-nitrogen gas atmosphere, and their structure and composition were studied. It is shown that on the surface of the film there are predominantly small microdroplets with a diameter of less than 0,5 μm, formed by Bi atoms. Large microdroplets with a diameter of 2 to 6 μm consist partly of Bi and Ga. No microdroplets formed only from Ga were found. It is noted that small Ga microdroplets are adsorbed on the surface of large Bi microdroplets without forming a GaBi alloy. It was also found that the formation of Bi microdroplets also occurs due to the segregation of Bi atoms on the film surface. The energy-dispersive spectroscopy data make it possible to characterize the resulting thin films as GaAs0,995N0,015Bi0,03. The mean square roughness of the film surface was 12,2 nm. The resulting GaAs0,995N0,015Bi0,03 film has a polycrystalline structure. An analysis of the X-ray diffraction data showed that the film grew according to the Volmer-Weber law, when islands are nucleated and their sizes subsequently increase. The nuclei are most likely formed by GaAs, GaN, GaAsN, GaAsBi, and GaAsNBi. The calculated full width at half height for GaAs0,995N0,015Bi0,03 was – 0,8656ʺ, and the average crystallite size was 1,6 nm.
format	Статья
author	Devitsky, O. V. Девицкий, О. В.
author_facet	Devitsky, O. V. Девицкий, О. В.
author_sort	Devitsky, O. V.
title	STRUCTURE AND COMPOSITION OF THIN GaAs1-x-yNxBiy FILMS PRODUCED BY PULSED LASER DEPOSITION
title_short	STRUCTURE AND COMPOSITION OF THIN GaAs1-x-yNxBiy FILMS PRODUCED BY PULSED LASER DEPOSITION
title_full	STRUCTURE AND COMPOSITION OF THIN GaAs1-x-yNxBiy FILMS PRODUCED BY PULSED LASER DEPOSITION
title_fullStr	STRUCTURE AND COMPOSITION OF THIN GaAs1-x-yNxBiy FILMS PRODUCED BY PULSED LASER DEPOSITION
title_full_unstemmed	STRUCTURE AND COMPOSITION OF THIN GaAs1-x-yNxBiy FILMS PRODUCED BY PULSED LASER DEPOSITION
title_sort	structure and composition of thin gaas1-x-ynxbiy films produced by pulsed laser deposition
publishDate	2023
url	https://dspace.ncfu.ru/handle/20.500.12258/23459
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STRUCTURE AND COMPOSITION OF THIN GaAs1-x-yNxBiy FILMS PRODUCED BY PULSED LASER DEPOSITION

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