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STRUCTURE AND COMPOSITION OF THIN GaAs1-x-yNxBiy FILMS PRODUCED BY PULSED LASER DEPOSITION

Uniaxial cold pressing was used to fabricate GaAs0,9Bi0,1 targets with 10% Bi content. Thin films of GaAs1-x-yNxBiy onto a GaAs (100) substrate were obtained from the formed GaAs0,9Bi0,1 target by pulsed laser deposition in an argon-nitrogen gas atmosphere, and their structure and composition were s...

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Autores principales: Devitsky, O. V., Девицкий, О. В.
Formato: Статья
Lenguaje:Russian
Publicado: 2023
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Acceso en línea:https://dspace.ncfu.ru/handle/20.500.12258/23459
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