STRUCTURE AND COMPOSITION OF THIN GaAs1-x-yNxBiy FILMS PRODUCED BY PULSED LASER DEPOSITION
Uniaxial cold pressing was used to fabricate GaAs0,9Bi0,1 targets with 10% Bi content. Thin films of GaAs1-x-yNxBiy onto a GaAs (100) substrate were obtained from the formed GaAs0,9Bi0,1 target by pulsed laser deposition in an argon-nitrogen gas atmosphere, and their structure and composition were s...
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| Príomhchruthaitheoirí: | , |
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| Formáid: | Статья |
| Teanga: | Russian |
| Foilsithe / Cruthaithe: |
2023
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| Ábhair: | |
| Rochtain ar líne: | https://dspace.ncfu.ru/handle/20.500.12258/23459 |
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