Effect of nitrogen pressure on the composition and structure of thin films GaAs1 - x - yNxBiy

Thin films of GaAs1 - x - y NxBiy were deposited on a GaAs (100) substrate by pulsed laser deposition using an argon-nitrogen gas mixture at a pressure ranging from 1 to 60 Pa. The film thickness is found to decrease from 527 to 127 nm as the pressure of the argon-nitrogen gas mixture increased from...

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Egile Nagusiak:	Devitsky, O. V., Девицкий, О. В.
Formatua:	Статья
Hizkuntza:	English
Argitaratua:	2024
Gaiak:	GaAs1 - x - y NxBiy X-ray diffraction III-V-N-Bi Thin films Scanning electron microscopy Pulsed laser deposition
Sarrera elektronikoa:	https://dspace.ncfu.ru/handle/20.500.12258/26523
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id	ir-20.500.12258-26523
record_format	dspace
spelling	ir-20.500.12258-265232024-02-16T13:13:50Z Effect of nitrogen pressure on the composition and structure of thin films GaAs1 - x - yNxBiy Devitsky, O. V. Девицкий, О. В. GaAs1 - x - y NxBiy X-ray diffraction III-V-N-Bi Thin films Scanning electron microscopy Pulsed laser deposition Thin films of GaAs1 - x - y NxBiy were deposited on a GaAs (100) substrate by pulsed laser deposition using an argon-nitrogen gas mixture at a pressure ranging from 1 to 60 Pa. The film thickness is found to decrease from 527 to 127 nm as the pressure of the argon-nitrogen gas mixture increased from 20 Pa to 60 Pa due to reflection and scattering of the plasma torch flow on nitrogen and argon atoms. The increase in pressure results in a significant decrease in the size and density of droplets on the film surface. All samples exhibit a polycrystalline structure, and the film obtained at a pressure of 60 Pa exhibits the highest crystalline perfection. The VASP software package was used to calculate theoretically the diffractogram for a (2) GaAs0.889N0.037Bi0.074 supercell, and it has been observed that the width at half maximum intensity for the GaAsNBi (004) reflection decreases with increasing pressure of the argon-nitrogen gas mixture. The nitrogen concentration in the thin film is found to increase linearly with the increase in the pressure of the argon-nitrogen gas mixture, which was established using X-ray diffraction and photoluminescence methods. The composition of the film obtained at a pressure of 60 Pa is determined to be GaAs0.957N0.012Bi0.021. 2024-02-16T13:13:08Z 2024-02-16T13:13:08Z 2023 Статья Devitsky, O.V. Effect of nitrogen pressure on the composition and structure of thin films GaAs1 - x - yNxBiy // Izvestiya of Saratov University. Physics. - 2023. - 23 (4). - pp. 365-370. - DOI: 10.18500/1817-3020-2023-23-4-365-370 http://hdl.handle.net/20.500.12258/26523 en Izvestiya of Saratov University. Physics application/pdf
institution	СКФУ
collection	Репозиторий
language	English
topic	GaAs1 - x - y NxBiy X-ray diffraction III-V-N-Bi Thin films Scanning electron microscopy Pulsed laser deposition
spellingShingle	GaAs1 - x - y NxBiy X-ray diffraction III-V-N-Bi Thin films Scanning electron microscopy Pulsed laser deposition Devitsky, O. V. Девицкий, О. В. Effect of nitrogen pressure on the composition and structure of thin films GaAs1 - x - yNxBiy
description	Thin films of GaAs1 - x - y NxBiy were deposited on a GaAs (100) substrate by pulsed laser deposition using an argon-nitrogen gas mixture at a pressure ranging from 1 to 60 Pa. The film thickness is found to decrease from 527 to 127 nm as the pressure of the argon-nitrogen gas mixture increased from 20 Pa to 60 Pa due to reflection and scattering of the plasma torch flow on nitrogen and argon atoms. The increase in pressure results in a significant decrease in the size and density of droplets on the film surface. All samples exhibit a polycrystalline structure, and the film obtained at a pressure of 60 Pa exhibits the highest crystalline perfection. The VASP software package was used to calculate theoretically the diffractogram for a (2) GaAs0.889N0.037Bi0.074 supercell, and it has been observed that the width at half maximum intensity for the GaAsNBi (004) reflection decreases with increasing pressure of the argon-nitrogen gas mixture. The nitrogen concentration in the thin film is found to increase linearly with the increase in the pressure of the argon-nitrogen gas mixture, which was established using X-ray diffraction and photoluminescence methods. The composition of the film obtained at a pressure of 60 Pa is determined to be GaAs0.957N0.012Bi0.021.
format	Статья
author	Devitsky, O. V. Девицкий, О. В.
author_facet	Devitsky, O. V. Девицкий, О. В.
author_sort	Devitsky, O. V.
title	Effect of nitrogen pressure on the composition and structure of thin films GaAs1 - x - yNxBiy
title_short	Effect of nitrogen pressure on the composition and structure of thin films GaAs1 - x - yNxBiy
title_full	Effect of nitrogen pressure on the composition and structure of thin films GaAs1 - x - yNxBiy
title_fullStr	Effect of nitrogen pressure on the composition and structure of thin films GaAs1 - x - yNxBiy
title_full_unstemmed	Effect of nitrogen pressure on the composition and structure of thin films GaAs1 - x - yNxBiy
title_sort	effect of nitrogen pressure on the composition and structure of thin films gaas1 - x - ynxbiy
publishDate	2024
url	https://dspace.ncfu.ru/handle/20.500.12258/26523
work_keys_str_mv	AT devitskyov effectofnitrogenpressureonthecompositionandstructureofthinfilmsgaas1xynxbiy AT devickijov effectofnitrogenpressureonthecompositionandstructureofthinfilmsgaas1xynxbiy
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Effect of nitrogen pressure on the composition and structure of thin films GaAs1 - x - yNxBiy

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