Effect of nitrogen pressure on the composition and structure of thin films GaAs1 - x - yNxBiy
Thin films of GaAs1 - x - y NxBiy were deposited on a GaAs (100) substrate by pulsed laser deposition using an argon-nitrogen gas mixture at a pressure ranging from 1 to 60 Pa. The film thickness is found to decrease from 527 to 127 nm as the pressure of the argon-nitrogen gas mixture increased from...
Wedi'i Gadw mewn:
| Prif Awduron: | , |
|---|---|
| Fformat: | Статья |
| Iaith: | English |
| Cyhoeddwyd: |
2024
|
| Pynciau: | |
| Mynediad Ar-lein: | https://dspace.ncfu.ru/handle/20.500.12258/26523 |
| Tagiau: |
Ychwanegu Tag
Dim Tagiau, Byddwch y cyntaf i dagio'r cofnod hwn!
|