Effect of nitrogen pressure on the composition and structure of thin films GaAs1 - x - yNxBiy
Thin films of GaAs1 - x - y NxBiy were deposited on a GaAs (100) substrate by pulsed laser deposition using an argon-nitrogen gas mixture at a pressure ranging from 1 to 60 Pa. The film thickness is found to decrease from 527 to 127 nm as the pressure of the argon-nitrogen gas mixture increased from...
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| Format: | Статья |
| Sprache: | English |
| Veröffentlicht: |
2024
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| Online Zugang: | https://dspace.ncfu.ru/handle/20.500.12258/26523 |
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