Effect of nitrogen pressure on the composition and structure of thin films GaAs1 - x - yNxBiy
Thin films of GaAs1 - x - y NxBiy were deposited on a GaAs (100) substrate by pulsed laser deposition using an argon-nitrogen gas mixture at a pressure ranging from 1 to 60 Pa. The film thickness is found to decrease from 527 to 127 nm as the pressure of the argon-nitrogen gas mixture increased from...
保存先:
| 主要な著者: | , |
|---|---|
| フォーマット: | Статья |
| 言語: | English |
| 出版事項: |
2024
|
| 主題: | |
| オンライン･アクセス: | https://dspace.ncfu.ru/handle/20.500.12258/26523 |
| タグ: |
タグ追加
タグなし, このレコードへの初めてのタグを付けませんか!
|