Effect of nitrogen pressure on the composition and structure of thin films GaAs1 - x - yNxBiy
Thin films of GaAs1 - x - y NxBiy were deposited on a GaAs (100) substrate by pulsed laser deposition using an argon-nitrogen gas mixture at a pressure ranging from 1 to 60 Pa. The film thickness is found to decrease from 527 to 127 nm as the pressure of the argon-nitrogen gas mixture increased from...
Сохранить в:
| Главные авторы: | , |
|---|---|
| 格式: | Статья |
| 語言: | English |
| 出版: |
2024
|
| 主題: | |
| 在線閱讀: | https://dspace.ncfu.ru/handle/20.500.12258/26523 |
| 標簽: |
添加標簽
沒有標簽, 成為第一個標記此記錄!
|