Pulsed magnetron sputtering and ion-induced annealing of carbon films
Thin carbon films are deposited on a silicon substrate at room temperatures via the biased pulsed magnetron sputtering of graphite in the physical (Ar, Kr, Xe) and reactive (Ar: CH4) modes at a different sputtering power density varying from 40 to 550 W/cm2. To ensure ion-assistance, negative bias o...
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| Päätekijät: | , , , |
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| Aineistotyyppi: | Статья |
| Kieli: | English |
| Julkaistu: |
Maik Nauka-Interperiodica Publishing
2018
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| Aiheet: | |
| Linkit: | https://www.scopus.com/record/display.uri?eid=2-s2.0-85017962362&origin=resultslist&sort=plf-f&src=s&nlo=1&nlr=20&nls=afprfnm-t&affilName=north+caucasus+federal+university&sid=966542d8105467f94fc40da257ddfff6&sot=afnl&sdt=sisr&sl=53&s=%28AF-ID%28%22North+Caucasus+Federal+University%22+60070541%29%29&ref=%28Pulsed+magnetron+sputtering+and+ion-induced+annealing+of+carbon+films%29&relpos=0&citeCnt=0&searchTerm= https://dspace.ncfu.ru/handle/20.500.12258/3038 |
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