Growing c-axis oriented aluminum nitride films by plasma-enhanced atomic layer deposition at low temperatures

The possibility of using plasma enhanced atomic layer deposition method for growing heteroepitaxial oriented AlN films on Si (100) and sapphire (001) substrates at temperatures less than 300 °C was investigated. The resulting samples were studied by X-ray diffraction analysis and ellipsometry. It ha...

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Главные авторы:	Tarala, V. A., Тарала, В. А., Ambartsumov, M. G., Амбарцумов, М. Г., Altakhov, A. S., Алтахов, А. С., Martens, V. Y., Мартенс, В. Я., Shevchenko, M. Y., Шевченко, М. Ю.
格式:	Статья
語言:	English
出版:	Elsevier B.V. 2018
主題:	A1. X-ray diffraction A3. Atomic layer epitaxy B1. Nitrides B2. Semiconducting aluminum compounds B2. Semiconducting III-V materials Aluminum nitride Aluminum coatings Atoms
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spelling	ir-20.500.12258-31662020-07-30T13:38:42Z Growing c-axis oriented aluminum nitride films by plasma-enhanced atomic layer deposition at low temperatures Tarala, V. A. Тарала, В. А. Ambartsumov, M. G. Амбарцумов, М. Г. Altakhov, A. S. Алтахов, А. С. Martens, V. Y. Мартенс, В. Я. Shevchenko, M. Y. Шевченко, М. Ю. A1. X-ray diffraction A3. Atomic layer epitaxy B1. Nitrides B2. Semiconducting aluminum compounds B2. Semiconducting III-V materials Aluminum nitride Aluminum coatings Atoms The possibility of using plasma enhanced atomic layer deposition method for growing heteroepitaxial oriented AlN films on Si (100) and sapphire (001) substrates at temperatures less than 300 °C was investigated. The resulting samples were studied by X-ray diffraction analysis and ellipsometry. It has been shown that, ceteris paribus, AlN films grown on sapphire substrates have higher crystallinity than the samples grown on silicon wafers. With duration of plasma exposure of more than 20 s and at a temperature of 300 °C synthesized heteroepitaxial film had refractive index equal to 2.03±0.03. The X-ray diffraction scans feature (002) and (004) reflections at 2Θ equal to 35.7° and 75.9°, which are characteristic of hexagonal polytype of AlN. For the best sample, (002) reflection had full width on the half maximum of 162±11″ 2018-10-09T09:59:12Z 2018-10-09T09:59:12Z 2016 Статья Tarala, V., Ambartsumov, M., Altakhov, A., Martens, V., Shevchenko, M. Growing c-axis oriented aluminum nitride films by Plasma-Enhanced Atomic Layer Deposition at low temperatures // Journal of Crystal Growth. - 2016. - Volume 455. - Pages 157-160 https://www.scopus.com/record/display.uri?eid=2-s2.0-85008690050&origin=resultslist&sort=plf-f&src=s&nlo=&nlr=&nls=&sid=2d4e826478140d99650a215e37019390&sot=aff&sdt=cl&cluster=scopubyr%2c%222016%22%2ct&sl=174&s=AF-ID%28%22North+Caucasus+Federal+University%22+60070541%29+OR+AF-ID%28%22Stavropol+State+University%22+60070961%29+OR+AF-ID%28%22stavropolskij+Gosudarstvennyj+Tehniceskij+Universitet%22+60026323%29&relpos=4&citeCnt=3&searchTerm= http://hdl.handle.net/20.500.12258/3166 en Journal of Crystal Growth application/pdf application/pdf Elsevier B.V.
institution	СКФУ
collection	Репозиторий
language	English
topic	A1. X-ray diffraction A3. Atomic layer epitaxy B1. Nitrides B2. Semiconducting aluminum compounds B2. Semiconducting III-V materials Aluminum nitride Aluminum coatings Atoms
spellingShingle	A1. X-ray diffraction A3. Atomic layer epitaxy B1. Nitrides B2. Semiconducting aluminum compounds B2. Semiconducting III-V materials Aluminum nitride Aluminum coatings Atoms Tarala, V. A. Тарала, В. А. Ambartsumov, M. G. Амбарцумов, М. Г. Altakhov, A. S. Алтахов, А. С. Martens, V. Y. Мартенс, В. Я. Shevchenko, M. Y. Шевченко, М. Ю. Growing c-axis oriented aluminum nitride films by plasma-enhanced atomic layer deposition at low temperatures
description	The possibility of using plasma enhanced atomic layer deposition method for growing heteroepitaxial oriented AlN films on Si (100) and sapphire (001) substrates at temperatures less than 300 °C was investigated. The resulting samples were studied by X-ray diffraction analysis and ellipsometry. It has been shown that, ceteris paribus, AlN films grown on sapphire substrates have higher crystallinity than the samples grown on silicon wafers. With duration of plasma exposure of more than 20 s and at a temperature of 300 °C synthesized heteroepitaxial film had refractive index equal to 2.03±0.03. The X-ray diffraction scans feature (002) and (004) reflections at 2Θ equal to 35.7° and 75.9°, which are characteristic of hexagonal polytype of AlN. For the best sample, (002) reflection had full width on the half maximum of 162±11″
format	Статья
author	Tarala, V. A. Тарала, В. А. Ambartsumov, M. G. Амбарцумов, М. Г. Altakhov, A. S. Алтахов, А. С. Martens, V. Y. Мартенс, В. Я. Shevchenko, M. Y. Шевченко, М. Ю.
author_facet	Tarala, V. A. Тарала, В. А. Ambartsumov, M. G. Амбарцумов, М. Г. Altakhov, A. S. Алтахов, А. С. Martens, V. Y. Мартенс, В. Я. Shevchenko, M. Y. Шевченко, М. Ю.
author_sort	Tarala, V. A.
title	Growing c-axis oriented aluminum nitride films by plasma-enhanced atomic layer deposition at low temperatures
title_short	Growing c-axis oriented aluminum nitride films by plasma-enhanced atomic layer deposition at low temperatures
title_full	Growing c-axis oriented aluminum nitride films by plasma-enhanced atomic layer deposition at low temperatures
title_fullStr	Growing c-axis oriented aluminum nitride films by plasma-enhanced atomic layer deposition at low temperatures
title_full_unstemmed	Growing c-axis oriented aluminum nitride films by plasma-enhanced atomic layer deposition at low temperatures
title_sort	growing c-axis oriented aluminum nitride films by plasma-enhanced atomic layer deposition at low temperatures
publisher	Elsevier B.V.
publishDate	2018
url	https://www.scopus.com/record/display.uri?eid=2-s2.0-85008690050&origin=resultslist&sort=plf-f&src=s&nlo=&nlr=&nls=&sid=2d4e826478140d99650a215e37019390&sot=aff&sdt=cl&cluster=scopubyr%2c%222016%22%2ct&sl=174&s=AF-ID%28%22North+Caucasus+Federal+University%22+60070541%29+OR+AF-ID%28%22Stavropol+State+University%22+60070961%29+OR+AF-ID%28%22stavropolskij+Gosudarstvennyj+Tehniceskij+Universitet%22+60026323%29&relpos=4&citeCnt=3&searchTerm= https://dspace.ncfu.ru/handle/20.500.12258/3166
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Growing c-axis oriented aluminum nitride films by plasma-enhanced atomic layer deposition at low temperatures

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