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Growing c-axis oriented aluminum nitride films by plasma-enhanced atomic layer deposition at low temperatures

Growing c-axis oriented aluminum nitride films by plasma-enhanced atomic layer deposition at low temperatures

The possibility of using plasma enhanced atomic layer deposition method for growing heteroepitaxial oriented AlN films on Si (100) and sapphire (001) substrates at temperatures less than 300 °C was investigated. The resulting samples were studied by X-ray diffraction analysis and ellipsometry. It ha...

पूर्ण विवरण

में बचाया:
ग्रंथसूची विवरण
मुख्य लेखकों: Tarala, V. A., Тарала, В. А., Ambartsumov, M. G., Амбарцумов, М. Г., Altakhov, A. S., Алтахов, А. С., Martens, V. Y., Мартенс, В. Я., Shevchenko, M. Y., Шевченко, М. Ю.
स्वरूप: Статья
भाषा:English
प्रकाशित: Elsevier B.V. 2018
विषय:
A1. X-ray diffraction
A3. Atomic layer epitaxy
B1. Nitrides
B2. Semiconducting aluminum compounds
B2. Semiconducting III-V materials
Aluminum nitride
Aluminum coatings
Atoms
ऑनलाइन पहुंच:https://www.scopus.com/record/display.uri?eid=2-s2.0-85008690050&origin=resultslist&sort=plf-f&src=s&nlo=&nlr=&nls=&sid=2d4e826478140d99650a215e37019390&sot=aff&sdt=cl&cluster=scopubyr%2c%222016%22%2ct&sl=174&s=AF-ID%28%22North+Caucasus+Federal+University%22+60070541%29+OR+AF-ID%28%22Stavropol+State+University%22+60070961%29+OR+AF-ID%28%22stavropolskij+Gosudarstvennyj+Tehniceskij+Universitet%22+60026323%29&relpos=4&citeCnt=3&searchTerm=
https://dspace.ncfu.ru/handle/20.500.12258/3166
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https://www.scopus.com/record/display.uri?eid=2-s2.0-85008690050&origin=resultslist&sort=plf-f&src=s&nlo=&nlr=&nls=&sid=2d4e826478140d99650a215e37019390&sot=aff&sdt=cl&cluster=scopubyr%2c%222016%22%2ct&sl=174&s=AF-ID%28%22North+Caucasus+Federal+University%22+60070541%29+OR+AF-ID%28%22Stavropol+State+University%22+60070961%29+OR+AF-ID%28%22stavropolskij+Gosudarstvennyj+Tehniceskij+Universitet%22+60026323%29&relpos=4&citeCnt=3&searchTerm=
https://dspace.ncfu.ru/handle/20.500.12258/3166

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