The effect of the transformation of point defects under Joule heating on efficiency of LEDs with InGaN/GaN quantum wells

It is shown that a short-time Joule heating of the active region of light-emitting diodes with InGaN/GaN quantum wells up to 125°C at a current density of 150 A/cm2 stimulates changes in the energy spectrum of defect states in the energy gap of GaN and leads to an increase in the quantum efficiency

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Huvudupphovsmän:	Tarala, V. A., Тарала, В. А.
Materialtyp:	Статья
Språk:	English
Publicerad:	Maik Nauka-Interperiodica Publishing 2018
Ämnen:	Quantum wells Point defects Joule heating
Länkar:	https://www.scopus.com/record/display.uri?eid=2-s2.0-85000501113&origin=resultslist&sort=plf-f&src=s&nlo=&nlr=&nls=&sid=4571c9c342bce71328dbf4646312b3f0&sot=aff&sdt=cl&cluster=scopubyr%2c%222016%22%2ct&sl=174&s=AF-ID%28%22North+Caucasus+Federal+University%22+60070541%29+OR+AF-ID%28%22Stavropol+State+University%22+60070961%29+OR+AF-ID%28%22stavropolskij+Gosudarstvennyj+Tehniceskij+Universitet%22+60026323%29&relpos=16&citeCnt=1&searchTerm= https://dspace.ncfu.ru/handle/20.500.12258/3178
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spelling	ir-20.500.12258-31782020-07-30T13:41:40Z The effect of the transformation of point defects under Joule heating on efficiency of LEDs with InGaN/GaN quantum wells Tarala, V. A. Тарала, В. А. Quantum wells Point defects Joule heating It is shown that a short-time Joule heating of the active region of light-emitting diodes with InGaN/GaN quantum wells up to 125°C at a current density of 150 A/cm2 stimulates changes in the energy spectrum of defect states in the energy gap of GaN and leads to an increase in the quantum efficiency 2018-10-10T09:48:09Z 2018-10-10T09:48:09Z 2016 Статья Bochkareva, N.I., Ivanov, A.M., Klochkov, A.V., Tarala, V.A., Shreter, Y.G. The effect of the transformation of point defects under Joule heating on efficiency of LEDs with InGaN/GaN quantum wells // Technical Physics Letters. - 2016. - Volume 42. - Issue 11. - Pages 1099-1102 https://www.scopus.com/record/display.uri?eid=2-s2.0-85000501113&origin=resultslist&sort=plf-f&src=s&nlo=&nlr=&nls=&sid=4571c9c342bce71328dbf4646312b3f0&sot=aff&sdt=cl&cluster=scopubyr%2c%222016%22%2ct&sl=174&s=AF-ID%28%22North+Caucasus+Federal+University%22+60070541%29+OR+AF-ID%28%22Stavropol+State+University%22+60070961%29+OR+AF-ID%28%22stavropolskij+Gosudarstvennyj+Tehniceskij+Universitet%22+60026323%29&relpos=16&citeCnt=1&searchTerm= http://hdl.handle.net/20.500.12258/3178 en Technical Physics Letters application/pdf application/pdf Maik Nauka-Interperiodica Publishing
institution	СКФУ
collection	Репозиторий
language	English
topic	Quantum wells Point defects Joule heating
spellingShingle	Quantum wells Point defects Joule heating Tarala, V. A. Тарала, В. А. The effect of the transformation of point defects under Joule heating on efficiency of LEDs with InGaN/GaN quantum wells
description	It is shown that a short-time Joule heating of the active region of light-emitting diodes with InGaN/GaN quantum wells up to 125°C at a current density of 150 A/cm2 stimulates changes in the energy spectrum of defect states in the energy gap of GaN and leads to an increase in the quantum efficiency
format	Статья
author	Tarala, V. A. Тарала, В. А.
author_facet	Tarala, V. A. Тарала, В. А.
author_sort	Tarala, V. A.
title	The effect of the transformation of point defects under Joule heating on efficiency of LEDs with InGaN/GaN quantum wells
title_short	The effect of the transformation of point defects under Joule heating on efficiency of LEDs with InGaN/GaN quantum wells
title_full	The effect of the transformation of point defects under Joule heating on efficiency of LEDs with InGaN/GaN quantum wells
title_fullStr	The effect of the transformation of point defects under Joule heating on efficiency of LEDs with InGaN/GaN quantum wells
title_full_unstemmed	The effect of the transformation of point defects under Joule heating on efficiency of LEDs with InGaN/GaN quantum wells
title_sort	effect of the transformation of point defects under joule heating on efficiency of leds with ingan/gan quantum wells
publisher	Maik Nauka-Interperiodica Publishing
publishDate	2018
url	https://www.scopus.com/record/display.uri?eid=2-s2.0-85000501113&origin=resultslist&sort=plf-f&src=s&nlo=&nlr=&nls=&sid=4571c9c342bce71328dbf4646312b3f0&sot=aff&sdt=cl&cluster=scopubyr%2c%222016%22%2ct&sl=174&s=AF-ID%28%22North+Caucasus+Federal+University%22+60070541%29+OR+AF-ID%28%22Stavropol+State+University%22+60070961%29+OR+AF-ID%28%22stavropolskij+Gosudarstvennyj+Tehniceskij+Universitet%22+60026323%29&relpos=16&citeCnt=1&searchTerm= https://dspace.ncfu.ru/handle/20.500.12258/3178
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The effect of the transformation of point defects under Joule heating on efficiency of LEDs with InGaN/GaN quantum wells

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