The effect of the transformation of point defects under Joule heating on efficiency of LEDs with InGaN/GaN quantum wells
It is shown that a short-time Joule heating of the active region of light-emitting diodes with InGaN/GaN quantum wells up to 125°C at a current density of 150 A/cm2 stimulates changes in the energy spectrum of defect states in the energy gap of GaN and leads to an increase in the quantum efficiency
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| Médium: | Статья |
| Jazyk: | English |
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Maik Nauka-Interperiodica Publishing
2018
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https://www.scopus.com/record/display.uri?eid=2-s2.0-85000501113&origin=resultslist&sort=plf-f&src=s&nlo=&nlr=&nls=&sid=4571c9c342bce71328dbf4646312b3f0&sot=aff&sdt=cl&cluster=scopubyr%2c%222016%22%2ct&sl=174&s=AF-ID%28%22North+Caucasus+Federal+University%22+60070541%29+OR+AF-ID%28%22Stavropol+State+University%22+60070961%29+OR+AF-ID%28%22stavropolskij+Gosudarstvennyj+Tehniceskij+Universitet%22+60026323%29&relpos=16&citeCnt=1&searchTerm=https://dspace.ncfu.ru/handle/20.500.12258/3178