Calculation of the Schottky barrier and current–voltage characteristics of metal–alloy structures based on silicon carbide

A simple but nonlinear model of the defect density at a metal–semiconductor interface, when a Schottky barrier is formed by surface defects states localized at the interface, is developed. It is shown that taking the nonlinear dependence of the Fermi level on the defect density into account leads to...

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Glavni autori:	Altukhov, V. I., Алтухов, В. И., Kasyanenko, I. S., Касьяненко, И. С., Sankin, A. V., Санкин, А. В.
Format:	Статья
Jezik:	English
Izdano:	Maik Nauka-Interperiodica Publishing 2018
Teme:	Schottky barrier Metal–alloy Current voltage characteristics Silicon carbide
Online pristup:	https://www.scopus.com/record/display.uri?eid=2-s2.0-84986192894&origin=resultslist&sort=plf-f&src=s&nlo=1&nlr=20&nls=afprfnm-t&affilName=North+caucasus+federal+university&sid=1e7600f256f2f6c480679cbfff85823c&sot=afnl&sdt=sisr&cluster=scopubyr%2c%222016%22%2ct&sl=53&s=%28AF-ID%28%22North+Caucasus+Federal+University%22+60070541%29%29&ref=%28Calculation+of+the+Schottky+barrier+and+current%E2%80%93voltage+characteristics+of+metal%E2%80%93alloy+structures+based+on+silicon+carbide%29&relpos=0&citeCnt=1&searchTerm= https://dspace.ncfu.ru/handle/20.500.12258/3404
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spelling	ir-20.500.12258-34042020-07-31T09:18:00Z Calculation of the Schottky barrier and current–voltage characteristics of metal–alloy structures based on silicon carbide Altukhov, V. I. Алтухов, В. И. Kasyanenko, I. S. Касьяненко, И. С. Sankin, A. V. Санкин, А. В. Schottky barrier Metal–alloy Current voltage characteristics Silicon carbide A simple but nonlinear model of the defect density at a metal–semiconductor interface, when a Schottky barrier is formed by surface defects states localized at the interface, is developed. It is shown that taking the nonlinear dependence of the Fermi level on the defect density into account leads to a Schottky barrier increase by 15–25%. The calculated barrier heights are used to analyze the current–voltage characteristics of n-M/p-(SiC)1–x(AlN)x structures. The results of calculations are compared to experimental data 2018-11-13T14:27:20Z 2018-11-13T14:27:20Z 2016 Статья Altuhov, V.I., Kasyanenko, I.S., Sankin, A.V., Bilalov, B.A., Sigov, A.S. Calculation of the Schottky barrier and current–voltage characteristics of metal–alloy structures based on silicon carbide // Semiconductors. - 2016. - Volume 50. - Issue 9. - Pages 1168-1172 https://www.scopus.com/record/display.uri?eid=2-s2.0-84986192894&origin=resultslist&sort=plf-f&src=s&nlo=1&nlr=20&nls=afprfnm-t&affilName=North+caucasus+federal+university&sid=1e7600f256f2f6c480679cbfff85823c&sot=afnl&sdt=sisr&cluster=scopubyr%2c%222016%22%2ct&sl=53&s=%28AF-ID%28%22North+Caucasus+Federal+University%22+60070541%29%29&ref=%28Calculation+of+the+Schottky+barrier+and+current%E2%80%93voltage+characteristics+of+metal%E2%80%93alloy+structures+based+on+silicon+carbide%29&relpos=0&citeCnt=1&searchTerm= http://hdl.handle.net/20.500.12258/3404 en Semiconductors application/pdf application/pdf Maik Nauka-Interperiodica Publishing
institution	СКФУ
collection	Репозиторий
language	English
topic	Schottky barrier Metal–alloy Current voltage characteristics Silicon carbide
spellingShingle	Schottky barrier Metal–alloy Current voltage characteristics Silicon carbide Altukhov, V. I. Алтухов, В. И. Kasyanenko, I. S. Касьяненко, И. С. Sankin, A. V. Санкин, А. В. Calculation of the Schottky barrier and current–voltage characteristics of metal–alloy structures based on silicon carbide
description	A simple but nonlinear model of the defect density at a metal–semiconductor interface, when a Schottky barrier is formed by surface defects states localized at the interface, is developed. It is shown that taking the nonlinear dependence of the Fermi level on the defect density into account leads to a Schottky barrier increase by 15–25%. The calculated barrier heights are used to analyze the current–voltage characteristics of n-M/p-(SiC)1–x(AlN)x structures. The results of calculations are compared to experimental data
format	Статья
author	Altukhov, V. I. Алтухов, В. И. Kasyanenko, I. S. Касьяненко, И. С. Sankin, A. V. Санкин, А. В.
author_facet	Altukhov, V. I. Алтухов, В. И. Kasyanenko, I. S. Касьяненко, И. С. Sankin, A. V. Санкин, А. В.
author_sort	Altukhov, V. I.
title	Calculation of the Schottky barrier and current–voltage characteristics of metal–alloy structures based on silicon carbide
title_short	Calculation of the Schottky barrier and current–voltage characteristics of metal–alloy structures based on silicon carbide
title_full	Calculation of the Schottky barrier and current–voltage characteristics of metal–alloy structures based on silicon carbide
title_fullStr	Calculation of the Schottky barrier and current–voltage characteristics of metal–alloy structures based on silicon carbide
title_full_unstemmed	Calculation of the Schottky barrier and current–voltage characteristics of metal–alloy structures based on silicon carbide
title_sort	calculation of the schottky barrier and current–voltage characteristics of metal–alloy structures based on silicon carbide
publisher	Maik Nauka-Interperiodica Publishing
publishDate	2018
url	https://www.scopus.com/record/display.uri?eid=2-s2.0-84986192894&origin=resultslist&sort=plf-f&src=s&nlo=1&nlr=20&nls=afprfnm-t&affilName=North+caucasus+federal+university&sid=1e7600f256f2f6c480679cbfff85823c&sot=afnl&sdt=sisr&cluster=scopubyr%2c%222016%22%2ct&sl=53&s=%28AF-ID%28%22North+Caucasus+Federal+University%22+60070541%29%29&ref=%28Calculation+of+the+Schottky+barrier+and+current%E2%80%93voltage+characteristics+of+metal%E2%80%93alloy+structures+based+on+silicon+carbide%29&relpos=0&citeCnt=1&searchTerm= https://dspace.ncfu.ru/handle/20.500.12258/3404
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Calculation of the Schottky barrier and current–voltage characteristics of metal–alloy structures based on silicon carbide

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