Calculation of the Schottky barrier height at the contact between a metal and (SiC)1–x(AlN)x semiconductor solid solution

A simple model of the metal–semiconductor contact that is nonlinear in the concentration of defects when the Schottky barrier is formed by the surface defect states Ei localized at the interface has been proposed. It has been shown that taking into account the nonlinear dependence of the Fermi energ...

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Auteurs principaux:	Altukhov, V. I., Алтухов, В. И., Kasyanenko, I. S., Касьяненко, И. С., Sankin, A. V., Санкин, А. В.
Format:	Статья
Langue:	English
Publié:	Maik Nauka Publishing / Springer SBM 2018
Sujets:	Current voltage characteristics Interface states Semiconductor metal boundaries Silicon carbide Surface defects Schottky barrier diodes
Accès en ligne:	https://www.scopus.com/record/display.uri?eid=2-s2.0-84946115090&origin=resultslist&sort=plf-f&src=s&nlo=1&nlr=20&nls=afprfnm-t&affilName=north+caucasus+federal+university&sid=dc7f8c6f40c1112203ece798567bdeb2&sot=afnl&sdt=cl&cluster=scopubyr%2c%222015%22%2ct&sl=53&s=%28AF-ID%28%22North+Caucasus+Federal+University%22+60070541%29%29&relpos=8&citeCnt=0&searchTerm= https://dspace.ncfu.ru/handle/20.500.12258/3689
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spelling	ir-20.500.12258-36892020-09-15T08:54:32Z Calculation of the Schottky barrier height at the contact between a metal and (SiC)1–x(AlN)x semiconductor solid solution Altukhov, V. I. Алтухов, В. И. Kasyanenko, I. S. Касьяненко, И. С. Sankin, A. V. Санкин, А. В. Current voltage characteristics Interface states Semiconductor metal boundaries Silicon carbide Surface defects Schottky barrier diodes A simple model of the metal–semiconductor contact that is nonlinear in the concentration of defects when the Schottky barrier is formed by the surface defect states Ei localized at the interface has been proposed. It has been shown that taking into account the nonlinear dependence of the Fermi energy EF on the concentration of defects results in an increase in the Schottky barrier height by 15 to 25%. The calculated values of the Schottky barrier height have been used for the analysis of the current-voltage characteristics of M/(SiC)1–x(AlN)x structures. The theoretical results have been compared with the experimental data 2018-12-17T09:12:45Z 2018-12-17T09:12:45Z 2015 Статья Safaraliev, G.K., Bilalov, B.A., Kurbanov, M.K., Altukhov, V.I., Kas’yanenko, I.S., Sankin, A.V. Calculation of the Schottky barrier height at the contact between a metal and (SiC)1–x(AlN)x semiconductor solid solution // Russian Microelectronics. - 2015. - Volume 44. - Issue 6. - Pages 404-409 https://www.scopus.com/record/display.uri?eid=2-s2.0-84946115090&origin=resultslist&sort=plf-f&src=s&nlo=1&nlr=20&nls=afprfnm-t&affilName=north+caucasus+federal+university&sid=dc7f8c6f40c1112203ece798567bdeb2&sot=afnl&sdt=cl&cluster=scopubyr%2c%222015%22%2ct&sl=53&s=%28AF-ID%28%22North+Caucasus+Federal+University%22+60070541%29%29&relpos=8&citeCnt=0&searchTerm= http://hdl.handle.net/20.500.12258/3689 en Russian Microelectronics application/pdf Maik Nauka Publishing / Springer SBM
institution	СКФУ
collection	Репозиторий
language	English
topic	Current voltage characteristics Interface states Semiconductor metal boundaries Silicon carbide Surface defects Schottky barrier diodes
spellingShingle	Current voltage characteristics Interface states Semiconductor metal boundaries Silicon carbide Surface defects Schottky barrier diodes Altukhov, V. I. Алтухов, В. И. Kasyanenko, I. S. Касьяненко, И. С. Sankin, A. V. Санкин, А. В. Calculation of the Schottky barrier height at the contact between a metal and (SiC)1–x(AlN)x semiconductor solid solution
description	A simple model of the metal–semiconductor contact that is nonlinear in the concentration of defects when the Schottky barrier is formed by the surface defect states Ei localized at the interface has been proposed. It has been shown that taking into account the nonlinear dependence of the Fermi energy EF on the concentration of defects results in an increase in the Schottky barrier height by 15 to 25%. The calculated values of the Schottky barrier height have been used for the analysis of the current-voltage characteristics of M/(SiC)1–x(AlN)x structures. The theoretical results have been compared with the experimental data
format	Статья
author	Altukhov, V. I. Алтухов, В. И. Kasyanenko, I. S. Касьяненко, И. С. Sankin, A. V. Санкин, А. В.
author_facet	Altukhov, V. I. Алтухов, В. И. Kasyanenko, I. S. Касьяненко, И. С. Sankin, A. V. Санкин, А. В.
author_sort	Altukhov, V. I.
title	Calculation of the Schottky barrier height at the contact between a metal and (SiC)1–x(AlN)x semiconductor solid solution
title_short	Calculation of the Schottky barrier height at the contact between a metal and (SiC)1–x(AlN)x semiconductor solid solution
title_full	Calculation of the Schottky barrier height at the contact between a metal and (SiC)1–x(AlN)x semiconductor solid solution
title_fullStr	Calculation of the Schottky barrier height at the contact between a metal and (SiC)1–x(AlN)x semiconductor solid solution
title_full_unstemmed	Calculation of the Schottky barrier height at the contact between a metal and (SiC)1–x(AlN)x semiconductor solid solution
title_sort	calculation of the schottky barrier height at the contact between a metal and (sic)1–x(aln)x semiconductor solid solution
publisher	Maik Nauka Publishing / Springer SBM
publishDate	2018
url	https://www.scopus.com/record/display.uri?eid=2-s2.0-84946115090&origin=resultslist&sort=plf-f&src=s&nlo=1&nlr=20&nls=afprfnm-t&affilName=north+caucasus+federal+university&sid=dc7f8c6f40c1112203ece798567bdeb2&sot=afnl&sdt=cl&cluster=scopubyr%2c%222015%22%2ct&sl=53&s=%28AF-ID%28%22North+Caucasus+Federal+University%22+60070541%29%29&relpos=8&citeCnt=0&searchTerm= https://dspace.ncfu.ru/handle/20.500.12258/3689
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Calculation of the Schottky barrier height at the contact between a metal and (SiC)1–x(AlN)x semiconductor solid solution

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