Ion-beam crystallization of inGaAs island nanostructures on GaAs substrates
The possibility of growing arrays of InxGa1-xAs nanocrystals on GaAs substrates by ion-beam deposition is experimentally shown. The influence of the ion energy, current density, and deposition time of sputtered materials on the height, lateral size, and density of arrays of InxGa1-xAs nanocrystals i...
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2019
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ir-20.500.12258-69202020-07-29T11:43:49Z Ion-beam crystallization of inGaAs island nanostructures on GaAs substrates Sysoev, I. A. Сысоев, И. А. Gusev, D. A. Гусев, Д. А. Optical-properties Heterostructures The possibility of growing arrays of InxGa1-xAs nanocrystals on GaAs substrates by ion-beam deposition is experimentally shown. The influence of the ion energy, current density, and deposition time of sputtered materials on the height, lateral size, and density of arrays of InxGa1-xAs nanocrystals is investigated. The possibilities of changing controllably the deposition parameters of InxGa1-xAs(GaAs) nanocrystals are analyzed. The technological growth parameters of InGaAs nanofilms on GaAs are determined. The composition, structural quality, and photoluminescence of InxGa1-xAs nanocrystals and films grown on GaAs are studied 2019-09-04T09:03:30Z 2019-09-04T09:03:30Z 2019 Статья Lunina, ML; Lunin, LS ; Sysoev, IA; Gusev, DA; Kazakova, AE. Ion-Beam Crystallization of InGaAs Island Nanostructures on GaAs Substrates // CRYSTALLOGRAPHY REPORTS. - 2019. - Том: 64. - Выпуск: 4. - Стр.: 649-655 http://apps.webofknowledge.com/full_record.do?product=WOS&search_mode=GeneralSearch&qid=7&SID=E471anh4cEh9AHVwVNL&page=1&doc=1 http://hdl.handle.net/20.500.12258/6920 en CRYSTALLOGRAPHY REPORTS application/pdf application/pdf PLEIADES PUBLISHING INC |
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Optical-properties Heterostructures |
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Optical-properties Heterostructures Sysoev, I. A. Сысоев, И. А. Gusev, D. A. Гусев, Д. А. Ion-beam crystallization of inGaAs island nanostructures on GaAs substrates |
description |
The possibility of growing arrays of InxGa1-xAs nanocrystals on GaAs substrates by ion-beam deposition is experimentally shown. The influence of the ion energy, current density, and deposition time of sputtered materials on the height, lateral size, and density of arrays of InxGa1-xAs nanocrystals is investigated. The possibilities of changing controllably the deposition parameters of InxGa1-xAs(GaAs) nanocrystals are analyzed. The technological growth parameters of InGaAs nanofilms on GaAs are determined. The composition, structural quality, and photoluminescence of InxGa1-xAs nanocrystals and films grown on GaAs are studied |
format |
Статья |
author |
Sysoev, I. A. Сысоев, И. А. Gusev, D. A. Гусев, Д. А. |
author_facet |
Sysoev, I. A. Сысоев, И. А. Gusev, D. A. Гусев, Д. А. |
author_sort |
Sysoev, I. A. |
title |
Ion-beam crystallization of inGaAs island nanostructures on GaAs substrates |
title_short |
Ion-beam crystallization of inGaAs island nanostructures on GaAs substrates |
title_full |
Ion-beam crystallization of inGaAs island nanostructures on GaAs substrates |
title_fullStr |
Ion-beam crystallization of inGaAs island nanostructures on GaAs substrates |
title_full_unstemmed |
Ion-beam crystallization of inGaAs island nanostructures on GaAs substrates |
title_sort |
ion-beam crystallization of ingaas island nanostructures on gaas substrates |
publisher |
PLEIADES PUBLISHING INC |
publishDate |
2019 |
url |
http://apps.webofknowledge.com/full_record.do?product=WOS&search_mode=GeneralSearch&qid=7&SID=E471anh4cEh9AHVwVNL&page=1&doc=1 https://dspace.ncfu.ru/handle/20.500.12258/6920 |
work_keys_str_mv |
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_version_ |
1760599322621116416 |