Extreme environment wideband, high-efficiency photovoltaics based on new physical principles and hyperfast LPE GaAs power electronics
The paper examines the issues of solar cells designs based on new LPE GaAs epitaxial structures for high-efficiency reception and conversion of solar energy in the wavelength band λ = 0,2 ÷ 4,0 μm, which allows to use them both under extreme climatic conditions of Sahara desert and in Baltic Sea reg...
Sábháilte in:
| Príomhchruthaitheoirí: | , , , |
|---|---|
| Formáid: | Статья |
| Teanga: | English |
| Foilsithe / Cruthaithe: |
Institute of Electrical and Electronics Engineers Inc.
2019
|
| Ábhair: | |
| Rochtain ar líne: | https://www.scopus.com/record/display.uri?eid=2-s2.0-85071956605&origin=resultslist&sort=plf-f&src=s&st1=Extreme+environment+wideband%2c+high-efficiency+photovoltaics+based+on+new+physical+principles+and+hyperfast+LPE+GaAs+power+electronics&st2=&sid=1c5a6fe41babdcf93eed0c3d463275ee&sot=b&sdt=b&sl=148&s=TITLE-ABS-KEY%28Extreme+environment+wideband%2c+high-efficiency+photovoltaics+based+on+new+physical+principles+and+hyperfast+LPE+GaAs+power+electronics%29&relpos=0&citeCnt=0&searchTerm= https://dspace.ncfu.ru/handle/20.500.12258/7497 |
| Clibeanna: |
Cuir clib leis
Níl clibeanna ann, Bí ar an gcéad duine le clib a chur leis an taifead seo!
|
| Achoimre: | The paper examines the issues of solar cells designs based on new LPE GaAs epitaxial structures for high-efficiency reception and conversion of solar energy in the wavelength band λ = 0,2 ÷ 4,0 μm, which allows to use them both under extreme climatic conditions of Sahara desert and in Baltic Sea region.The paper shows future promising power devices for DC/AC conversion of solar energy to single-phase and three-phase power at frequencies 2 ÷ 10 MHz and with maximum ambient/case operating temperature up to 250°C.The paper addresses challenges and opportunities for development of new-generation high-performance LPE GaAs photodetectors on the basis of the new physical principles:-effect of GaAs energy band gap splitting by amphoteric hydrogen-like centers on silicon (Si) atoms;-phenomenon of efficiency increase in photodetectors based on quantum dot magnetic centers |
|---|