The dependence of aluminum nitride thin-film microstructure on the number of low-temperature plasma-enhanced atomic layer deposition process cycles

Within the framework of the study, oriented aluminum nitride coatings were obtained on sapphire with orientation along the direction (0001) using the PEALD method at a temperature of 250°С and a number of deposition cycles from 80 to 500. The obtained samples were studied using ellipsometry, X-ray d...

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Hoofdauteurs:	Ambartsumov, M. G., Амбарцумов, М. Г., Tarala, V. A., Тарала, В. А., Krandievsky, S. O., Крандиевский, С. О., Kravtsov, A. A., Кравцов, А. А., Saytiev, A. B., Саутиев, А. Б., Mitrofanenko, L. M., Митрофаненко, Л. М.
Formaat:	Статья
Taal:	English
Gepubliceerd in:	Elsevier B.V. 2019
Onderwerpen:	AFM AlN Atomic layer deposition Ellipsometry PEALD X-ray diffraction Aluminum coated steel Aluminum nitride Atomic force microscopy Aluminum coatings
Online toegang:	https://www.scopus.com/record/display.uri?eid=2-s2.0-85075729953&origin=resultslist&sort=plf-f&src=s&st1=The+dependence+of+aluminum+nitride+thin-film+microstructure+on+the+number+of+low-temperature+plasma-enhanced+atomic+layer+deposition+process+cycles&st2=&sid=74064f1f4b25bf0f5642e6da8f07737a&sot=b&sdt=b&sl=162&s=TITLE-ABS-KEY%28The+dependence+of+aluminum+nitride+thin-film+microstructure+on+the+number+of+low-temperature+plasma-enhanced+atomic+layer+deposition+process+cycles%29&relpos=0&citeCnt=0&searchTerm= https://dspace.ncfu.ru/handle/20.500.12258/9109
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spelling	ir-20.500.12258-91092020-02-13T12:51:56Z The dependence of aluminum nitride thin-film microstructure on the number of low-temperature plasma-enhanced atomic layer deposition process cycles Ambartsumov, M. G. Амбарцумов, М. Г. Tarala, V. A. Тарала, В. А. Krandievsky, S. O. Крандиевский, С. О. Kravtsov, A. A. Кравцов, А. А. Saytiev, A. B. Саутиев, А. Б. Mitrofanenko, L. M. Митрофаненко, Л. М. AFM AlN Atomic layer deposition Ellipsometry PEALD X-ray diffraction Aluminum coated steel Aluminum nitride Atomic force microscopy Aluminum coatings Within the framework of the study, oriented aluminum nitride coatings were obtained on sapphire with orientation along the direction (0001) using the PEALD method at a temperature of 250°С and a number of deposition cycles from 80 to 500. The obtained samples were studied using ellipsometry, X-ray diffraction, and atomic force microscopy. It was shown that with an increase in the thickness of the coating, the refraction index increases to 2.02, and the root-mean-square (RMS) increases from 0.35 to 2.35 nm. All samples had (0002) and (0004) reflexes on X-ray diffractograms measured in the Bragg-Brentano geometry (θ/2θ-scan). On Δω-scans of the reflex (0002), the full width at half maximum (FWHM) amounted to 162 ± 7 arcsec 2019-12-09T12:27:16Z 2019-12-09T12:27:16Z 2019 Статья Ambartsumov, M.G., Tarala, V.A., Krandievsky, S.O., Kravtsov, A.A., Sautiev, A.B., Mitrofanenko, L.M. The dependence of aluminum nitride thin-film microstructure on the number of low-temperature plasma-enhanced atomic layer deposition process cycles // Surface and Coatings Technology. - 2019. - Volume 378. - Номер статьи 124744 https://www.scopus.com/record/display.uri?eid=2-s2.0-85075729953&origin=resultslist&sort=plf-f&src=s&st1=The+dependence+of+aluminum+nitride+thin-film+microstructure+on+the+number+of+low-temperature+plasma-enhanced+atomic+layer+deposition+process+cycles&st2=&sid=74064f1f4b25bf0f5642e6da8f07737a&sot=b&sdt=b&sl=162&s=TITLE-ABS-KEY%28The+dependence+of+aluminum+nitride+thin-film+microstructure+on+the+number+of+low-temperature+plasma-enhanced+atomic+layer+deposition+process+cycles%29&relpos=0&citeCnt=0&searchTerm= http://hdl.handle.net/20.500.12258/9109 en Surface and Coatings Technology application/pdf application/pdf Elsevier B.V.
institution	СКФУ
collection	Репозиторий
language	English
topic	AFM AlN Atomic layer deposition Ellipsometry PEALD X-ray diffraction Aluminum coated steel Aluminum nitride Atomic force microscopy Aluminum coatings
spellingShingle	AFM AlN Atomic layer deposition Ellipsometry PEALD X-ray diffraction Aluminum coated steel Aluminum nitride Atomic force microscopy Aluminum coatings Ambartsumov, M. G. Амбарцумов, М. Г. Tarala, V. A. Тарала, В. А. Krandievsky, S. O. Крандиевский, С. О. Kravtsov, A. A. Кравцов, А. А. Saytiev, A. B. Саутиев, А. Б. Mitrofanenko, L. M. Митрофаненко, Л. М. The dependence of aluminum nitride thin-film microstructure on the number of low-temperature plasma-enhanced atomic layer deposition process cycles
description	Within the framework of the study, oriented aluminum nitride coatings were obtained on sapphire with orientation along the direction (0001) using the PEALD method at a temperature of 250°С and a number of deposition cycles from 80 to 500. The obtained samples were studied using ellipsometry, X-ray diffraction, and atomic force microscopy. It was shown that with an increase in the thickness of the coating, the refraction index increases to 2.02, and the root-mean-square (RMS) increases from 0.35 to 2.35 nm. All samples had (0002) and (0004) reflexes on X-ray diffractograms measured in the Bragg-Brentano geometry (θ/2θ-scan). On Δω-scans of the reflex (0002), the full width at half maximum (FWHM) amounted to 162 ± 7 arcsec
format	Статья
author	Ambartsumov, M. G. Амбарцумов, М. Г. Tarala, V. A. Тарала, В. А. Krandievsky, S. O. Крандиевский, С. О. Kravtsov, A. A. Кравцов, А. А. Saytiev, A. B. Саутиев, А. Б. Mitrofanenko, L. M. Митрофаненко, Л. М.
author_facet	Ambartsumov, M. G. Амбарцумов, М. Г. Tarala, V. A. Тарала, В. А. Krandievsky, S. O. Крандиевский, С. О. Kravtsov, A. A. Кравцов, А. А. Saytiev, A. B. Саутиев, А. Б. Mitrofanenko, L. M. Митрофаненко, Л. М.
author_sort	Ambartsumov, M. G.
title	The dependence of aluminum nitride thin-film microstructure on the number of low-temperature plasma-enhanced atomic layer deposition process cycles
title_short	The dependence of aluminum nitride thin-film microstructure on the number of low-temperature plasma-enhanced atomic layer deposition process cycles
title_full	The dependence of aluminum nitride thin-film microstructure on the number of low-temperature plasma-enhanced atomic layer deposition process cycles
title_fullStr	The dependence of aluminum nitride thin-film microstructure on the number of low-temperature plasma-enhanced atomic layer deposition process cycles
title_full_unstemmed	The dependence of aluminum nitride thin-film microstructure on the number of low-temperature plasma-enhanced atomic layer deposition process cycles
title_sort	dependence of aluminum nitride thin-film microstructure on the number of low-temperature plasma-enhanced atomic layer deposition process cycles
publisher	Elsevier B.V.
publishDate	2019
url	https://www.scopus.com/record/display.uri?eid=2-s2.0-85075729953&origin=resultslist&sort=plf-f&src=s&st1=The+dependence+of+aluminum+nitride+thin-film+microstructure+on+the+number+of+low-temperature+plasma-enhanced+atomic+layer+deposition+process+cycles&st2=&sid=74064f1f4b25bf0f5642e6da8f07737a&sot=b&sdt=b&sl=162&s=TITLE-ABS-KEY%28The+dependence+of+aluminum+nitride+thin-film+microstructure+on+the+number+of+low-temperature+plasma-enhanced+atomic+layer+deposition+process+cycles%29&relpos=0&citeCnt=0&searchTerm= https://dspace.ncfu.ru/handle/20.500.12258/9109
work_keys_str_mv	AT ambartsumovmg thedependenceofaluminumnitridethinfilmmicrostructureonthenumberoflowtemperatureplasmaenhancedatomiclayerdepositionprocesscycles AT ambarcumovmg thedependenceofaluminumnitridethinfilmmicrostructureonthenumberoflowtemperatureplasmaenhancedatomiclayerdepositionprocesscycles AT taralava thedependenceofaluminumnitridethinfilmmicrostructureonthenumberoflowtemperatureplasmaenhancedatomiclayerdepositionprocesscycles AT taralava thedependenceofaluminumnitridethinfilmmicrostructureonthenumberoflowtemperatureplasmaenhancedatomiclayerdepositionprocesscycles AT krandievskyso thedependenceofaluminumnitridethinfilmmicrostructureonthenumberoflowtemperatureplasmaenhancedatomiclayerdepositionprocesscycles AT krandievskijso thedependenceofaluminumnitridethinfilmmicrostructureonthenumberoflowtemperatureplasmaenhancedatomiclayerdepositionprocesscycles AT kravtsovaa thedependenceofaluminumnitridethinfilmmicrostructureonthenumberoflowtemperatureplasmaenhancedatomiclayerdepositionprocesscycles AT kravcovaa thedependenceofaluminumnitridethinfilmmicrostructureonthenumberoflowtemperatureplasmaenhancedatomiclayerdepositionprocesscycles AT saytievab thedependenceofaluminumnitridethinfilmmicrostructureonthenumberoflowtemperatureplasmaenhancedatomiclayerdepositionprocesscycles AT sautievab thedependenceofaluminumnitridethinfilmmicrostructureonthenumberoflowtemperatureplasmaenhancedatomiclayerdepositionprocesscycles AT mitrofanenkolm thedependenceofaluminumnitridethinfilmmicrostructureonthenumberoflowtemperatureplasmaenhancedatomiclayerdepositionprocesscycles AT mitrofanenkolm thedependenceofaluminumnitridethinfilmmicrostructureonthenumberoflowtemperatureplasmaenhancedatomiclayerdepositionprocesscycles AT ambartsumovmg dependenceofaluminumnitridethinfilmmicrostructureonthenumberoflowtemperatureplasmaenhancedatomiclayerdepositionprocesscycles AT ambarcumovmg dependenceofaluminumnitridethinfilmmicrostructureonthenumberoflowtemperatureplasmaenhancedatomiclayerdepositionprocesscycles AT taralava dependenceofaluminumnitridethinfilmmicrostructureonthenumberoflowtemperatureplasmaenhancedatomiclayerdepositionprocesscycles AT taralava dependenceofaluminumnitridethinfilmmicrostructureonthenumberoflowtemperatureplasmaenhancedatomiclayerdepositionprocesscycles AT krandievskyso dependenceofaluminumnitridethinfilmmicrostructureonthenumberoflowtemperatureplasmaenhancedatomiclayerdepositionprocesscycles AT krandievskijso dependenceofaluminumnitridethinfilmmicrostructureonthenumberoflowtemperatureplasmaenhancedatomiclayerdepositionprocesscycles AT kravtsovaa dependenceofaluminumnitridethinfilmmicrostructureonthenumberoflowtemperatureplasmaenhancedatomiclayerdepositionprocesscycles AT kravcovaa dependenceofaluminumnitridethinfilmmicrostructureonthenumberoflowtemperatureplasmaenhancedatomiclayerdepositionprocesscycles AT saytievab dependenceofaluminumnitridethinfilmmicrostructureonthenumberoflowtemperatureplasmaenhancedatomiclayerdepositionprocesscycles AT sautievab dependenceofaluminumnitridethinfilmmicrostructureonthenumberoflowtemperatureplasmaenhancedatomiclayerdepositionprocesscycles AT mitrofanenkolm dependenceofaluminumnitridethinfilmmicrostructureonthenumberoflowtemperatureplasmaenhancedatomiclayerdepositionprocesscycles AT mitrofanenkolm dependenceofaluminumnitridethinfilmmicrostructureonthenumberoflowtemperatureplasmaenhancedatomiclayerdepositionprocesscycles
_version_	1760601811081756672

The dependence of aluminum nitride thin-film microstructure on the number of low-temperature plasma-enhanced atomic layer deposition process cycles

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