The dependence of aluminum nitride thin-film microstructure on the number of low-temperature plasma-enhanced atomic layer deposition process cycles
Within the framework of the study, oriented aluminum nitride coatings were obtained on sapphire with orientation along the direction (0001) using the PEALD method at a temperature of 250°С and a number of deposition cycles from 80 to 500. The obtained samples were studied using ellipsometry, X-ray d...
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Antzeko izenburuak
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Growth of aluminum nitride films by plasma-enhanced atomic layer deposition
nork: Tarala, V. A., et al.
Argitaratua: (2018) -
Growing aluminum nitride films by plasma-enhanced atomic layer deposition at low temperatures
nork: Tarala, V. A., et al.
Argitaratua: (2018) -
Growth of heteroepitaxial aluminium nitride films on aluminium oxide substrates via PEALD method
nork: Tarala, V. A., et al.
Argitaratua: (2018) -
Growth of heteroepitaxial aluminium nitride films on aluminium oxide substrates via PEALD method
nork: Tarala, V. A., et al.
Argitaratua: (2018) -
Growing c-axis oriented aluminum nitride films by plasma-enhanced atomic layer deposition at low temperatures
nork: Tarala, V. A., et al.
Argitaratua: (2018)