Пропуск в контексте

The dependence of aluminum nitride thin-film microstructure on the number of low-temperature plasma-enhanced atomic layer deposition process cycles

Within the framework of the study, oriented aluminum nitride coatings were obtained on sapphire with orientation along the direction (0001) using the PEALD method at a temperature of 250°С and a number of deposition cycles from 80 to 500. The obtained samples were studied using ellipsometry, X-ray d...

תיאור מלא

שמור ב:
מידע ביבליוגרפי
Главные авторы: Ambartsumov, M. G., Амбарцумов, М. Г., Tarala, V. A., Тарала, В. А., Krandievsky, S. O., Крандиевский, С. О., Kravtsov, A. A., Кравцов, А. А., Saytiev, A. B., Саутиев, А. Б., Mitrofanenko, L. M., Митрофаненко, Л. М.
פורמט: Статья
שפה:English
יצא לאור: Elsevier B.V. 2019
נושאים:
גישה מקוונת:https://www.scopus.com/record/display.uri?eid=2-s2.0-85075729953&origin=resultslist&sort=plf-f&src=s&st1=The+dependence+of+aluminum+nitride+thin-film+microstructure+on+the+number+of+low-temperature+plasma-enhanced+atomic+layer+deposition+process+cycles&st2=&sid=74064f1f4b25bf0f5642e6da8f07737a&sot=b&sdt=b&sl=162&s=TITLE-ABS-KEY%28The+dependence+of+aluminum+nitride+thin-film+microstructure+on+the+number+of+low-temperature+plasma-enhanced+atomic+layer+deposition+process+cycles%29&relpos=0&citeCnt=0&searchTerm=
https://dspace.ncfu.ru/handle/20.500.12258/9109
תגים: הוספת תג
אין תגיות, היה/י הראשונ/ה לתייג את הרשומה!