Altukhov, V. I., Алтухов, В. И., Sankin, A. V., Санкин, А. В., Sysoev, D. K., Сысоев, Д. К., . . . Янукян, Э. Г. (2018). Schottky-Barrier Model Nonlinear in Surface-State Concentration and Calculation of the I–V Characteristics of Diodes Based on SiC and Its Solid Solutions in the Composite Charge-Transport Model. Pleiades Publishing.
Trích dẫn kiểu Chicago (xuất bản lần thứ 7)Altukhov, V. I., В. И Алтухов, A. V. Sankin, А. В Санкин, D. K. Sysoev, Д. К Сысоев, E. G. Yanukyan, và Э. Г Янукян. Schottky-Barrier Model Nonlinear in Surface-State Concentration and Calculation of the I–V Characteristics of Diodes Based on SiC and Its Solid Solutions in the Composite Charge-Transport Model. Pleiades Publishing, 2018.
Trích dẫn kiểu MLA (xuất bản lần thứ 8)Altukhov, V. I., et al. Schottky-Barrier Model Nonlinear in Surface-State Concentration and Calculation of the I–V Characteristics of Diodes Based on SiC and Its Solid Solutions in the Composite Charge-Transport Model. Pleiades Publishing, 2018.