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Schottky-Barrier Model Nonlinear in Surface-State Concentration and Calculation of the I–V Characteristics of Diodes Based on SiC and Its Solid Solutions in the Composite Charge-Transport Model

Schottky-Barrier Model Nonlinear in Surface-State Concentration and Calculation of the I–V Characteristics of Diodes Based on SiC and Its Solid Solutions in the Composite Charge-Transport Model

عرض إصدارات أخرى (1)

A modified Schottky-barrier model, which is nonlinear in terms of the surface-state concentration and contains a local quasi-Fermi level at the interface induced by excess surface charge, is proposed. Such an approach makes it possible to explain the observed similarity of the I–V characteristics of...

وصف كامل

محفوظ في:
التفاصيل البيبلوغرافية
المؤلفون الرئيسيون: Altukhov, V. I., Алтухов, В. И., Sankin, A. V., Санкин, А. В., Sysoev, D. K., Сысоев, Д. К., Yanukyan, E. G., Янукян, Э. Г.
التنسيق: Статья
اللغة:English
منشور في: Pleiades Publishing 2018
الموضوعات:
Schottky-barrier model
Composite charge-transport model
الوصول للمادة أونلاين:https://www.scopus.com/record/display.uri?eid=2-s2.0-85043483221&origin=resultslist&sort=plf-f&src=s&nlo=&nlr=&nls=&sid=bd412f9ae61921f99b80d14c26f97e2e&sot=aff&sdt=sisr&sl=145&s=AF-ID%28%22North+Caucasus+Federal+University%22+60070541%29+OR+AF-ID%28%22%5bNo+Affiliation+ID+found%5d%22+60070961%29+OR+AF-ID%28%22%5bNo+Affiliation+ID+found%5d%22+60026323%29&ref=%28Schottky-Barrier+Model+Nonlinear+in+Surface-State+Concentration+and+Calculation+of+the+I%E2%80%93V+Characteristics+of+Diodes+Based+on+SiC+and+Its+Solid+Solutions+in+the+Composite+Charge-Transport+Model%29&relpos=0&citeCnt=0&searchTerm=
https://dspace.ncfu.ru/handle/20.500.12258/2754
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