Schottky-Barrier Model Nonlinear in Surface-State Concentration and Calculation of the I–V Characteristics of Diodes Based on SiC and Its Solid Solutions in the Composite Charge-Transport Model
A modified Schottky-barrier model, which is nonlinear in terms of the surface-state concentration and contains a local quasi-Fermi level at the interface induced by excess surface charge, is proposed. Such an approach makes it possible to explain the observed similarity of the I–V characteristics of...
Uloženo v:
| Hlavní autoři: | , , , , , , , |
|---|---|
| Médium: | Статья |
| Jazyk: | English |
| Vydáno: |
Pleiades Publishing
2018
|
| Témata: | |
| On-line přístup: | https://www.scopus.com/record/display.uri?eid=2-s2.0-85043483221&origin=resultslist&sort=plf-f&src=s&nlo=&nlr=&nls=&sid=bd412f9ae61921f99b80d14c26f97e2e&sot=aff&sdt=sisr&sl=145&s=AF-ID%28%22North+Caucasus+Federal+University%22+60070541%29+OR+AF-ID%28%22%5bNo+Affiliation+ID+found%5d%22+60070961%29+OR+AF-ID%28%22%5bNo+Affiliation+ID+found%5d%22+60026323%29&ref=%28Schottky-Barrier+Model+Nonlinear+in+Surface-State+Concentration+and+Calculation+of+the+I%E2%80%93V+Characteristics+of+Diodes+Based+on+SiC+and+Its+Solid+Solutions+in+the+Composite+Charge-Transport+Model%29&relpos=0&citeCnt=0&searchTerm= https://dspace.ncfu.ru/handle/20.500.12258/2754 |
| Tagy: |
Přidat tag
Žádné tagy, Buďte první, kdo otaguje tento záznam!
|
Search Result 1
Získat plný text
Autor Altukhov, V. I., Алтухов, В. И., Sankin, A. V., Санкин, А. В., Sysoev, D. K., Сысоев, Д. К., Yanukyan, E. G., Янукян, Э. Г.
Vydáno 2018
Získat plný textVydáno 2018
Získat plný text
Статья