Míreanna comhchosúla

• Schottky-Barrier model nonlinear in surface-state concentration and calculation of the I–V characteristics of diodes based on SiC and Its solid solutions in the composite charge-transport model
  de réir: Altukhov, V. I., et al.
  Foilsithe / Cruthaithe: (2018)
• Schotky barrier height and calculation of voltage–current characteristics of Al/n-(SiC)1–x(AlN)x diodes And 4H–SiC heterojunctions
  de réir: Altukhov, V. I., et al.
  Foilsithe / Cruthaithe: (2020)
• Modeling of Schottky barrier height and volt-amper characteristics for transition metal-solid solution (SiC)(1) (-) (x)(AlN)(x)
  de réir: Altukhov, V. I., et al.
  Foilsithe / Cruthaithe: (2018)
• Calculation of the Schottky barrier and current–voltage characteristics of metal–alloy structures based on silicon carbide
  de réir: Altukhov, V. I., et al.
  Foilsithe / Cruthaithe: (2018)
• Calculation of the Schottky barrier height at the contact between a metal and (SiC)1–x(AlN)x semiconductor solid solution
  de réir: Altukhov, V. I., et al.
  Foilsithe / Cruthaithe: (2018)