Growth of heteroepitaxial aluminium nitride films on aluminium oxide substrates via PEALD method

Research was performed on possibility of growth of heteroepitaxial aluminum nitride films on (0001) sapphire substrates within 210 to 300 degrees Celsius temperature range via plasma-enhanced atomic layer deposition. Samples created were studied by ellipsometry, x-ray diffraction analysis and rockin...

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Главные авторы:	Tarala, V. A., Тарала, В. А., Altakhov, A. S., Алтахов, А. С., Ambartsumov, M. G., Амбарцумов, М. Г., Martens, V. Y., Мартенс, В. Я., Shevchenko, M. Y., Шевченко, М. Ю.
Format:	Статья
Jezik:	English
Izdano:	Institute of Electrical and Electronics Engineers Inc. 2018
Teme:	Aluminum coatings Atomic layer deposition Epitaxial growth Refractive index Oxide films Aluminum nitride
Online dostop:	https://www.scopus.com/record/display.uri?eid=2-s2.0-85017584082&origin=resultslist&sort=plf-f&src=s&nlo=1&nlr=20&nls=afprfnm-t&affilName=north+caucasus+federal+university&sid=4a2a77c64cce8892f9521d5be1c7d9a7&sot=afnl&sdt=sisr&sl=53&s=%28AF-ID%28%22North+Caucasus+Federal+University%22+60070541%29%29&ref=%28Growth+of+heteroepitaxial+aluminium+nitride+films+on+aluminium+oxide+substrates+via+PEALD+method%29&relpos=0&citeCnt=0&searchTerm= https://dspace.ncfu.ru/handle/20.500.12258/3039
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id	oai:10.200.131.19:20.500.12258-3039
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spelling	oai:10.200.131.19:20.500.12258-30392018-09-21T09:24:52Z Growth of heteroepitaxial aluminium nitride films on aluminium oxide substrates via PEALD method Tarala, V. A. Тарала, В. А. Altakhov, A. S. Алтахов, А. С. Ambartsumov, M. G. Амбарцумов, М. Г. Martens, V. Y. Мартенс, В. Я. Shevchenko, M. Y. Шевченко, М. Ю. Aluminum coatings Atomic layer deposition Epitaxial growth Refractive index Oxide films Aluminum nitride Research was performed on possibility of growth of heteroepitaxial aluminum nitride films on (0001) sapphire substrates within 210 to 300 degrees Celsius temperature range via plasma-enhanced atomic layer deposition. Samples created were studied by ellipsometry, x-ray diffraction analysis and rocking curve methods. It was found that synthesized films have refractive index of 2.03 plus-minus 0.03. XRD scans show reflections at 2 theta equal 35.7 degree (0002) and 75.9 degree (0004), characteristic to hexagonal AlN polytype. For the best specimen, full width at half maximum of (0002) rocking curve scan was close to 162 plus-minus 11 arcsec 2018-09-21T09:24:31Z 2018-09-21T09:24:31Z 2017 Статья Tarala, V., Altakhov, A., Ambartsumov, M., Martens, V., Shevchenko, M. Growth of heteroepitaxial aluminium nitride films on aluminium oxide substrates via PEALD method // 2016 14th International Baltic Conference on Atomic Layer Deposition, BALD 2016 -Proceedings. - 2017. - Номер статьи 7886528. - Pages 29-30 https://www.scopus.com/record/display.uri?eid=2-s2.0-85017584082&origin=resultslist&sort=plf-f&src=s&nlo=1&nlr=20&nls=afprfnm-t&affilName=north+caucasus+federal+university&sid=4a2a77c64cce8892f9521d5be1c7d9a7&sot=afnl&sdt=sisr&sl=53&s=%28AF-ID%28%22North+Caucasus+Federal+University%22+60070541%29%29&ref=%28Growth+of+heteroepitaxial+aluminium+nitride+films+on+aluminium+oxide+substrates+via+PEALD+method%29&relpos=0&citeCnt=0&searchTerm= http://hdl.handle.net/20.500.12258/3039 en 2016 14th International Baltic Conference on Atomic Layer Deposition, BALD 2016 - Proceedings application/pdf application/pdf Institute of Electrical and Electronics Engineers Inc.
institution	СКФУ
collection	Репозиторий
language	English
topic	Aluminum coatings Atomic layer deposition Epitaxial growth Refractive index Oxide films Aluminum nitride
spellingShingle	Aluminum coatings Atomic layer deposition Epitaxial growth Refractive index Oxide films Aluminum nitride Tarala, V. A. Тарала, В. А. Altakhov, A. S. Алтахов, А. С. Ambartsumov, M. G. Амбарцумов, М. Г. Martens, V. Y. Мартенс, В. Я. Shevchenko, M. Y. Шевченко, М. Ю. Growth of heteroepitaxial aluminium nitride films on aluminium oxide substrates via PEALD method
description	Research was performed on possibility of growth of heteroepitaxial aluminum nitride films on (0001) sapphire substrates within 210 to 300 degrees Celsius temperature range via plasma-enhanced atomic layer deposition. Samples created were studied by ellipsometry, x-ray diffraction analysis and rocking curve methods. It was found that synthesized films have refractive index of 2.03 plus-minus 0.03. XRD scans show reflections at 2 theta equal 35.7 degree (0002) and 75.9 degree (0004), characteristic to hexagonal AlN polytype. For the best specimen, full width at half maximum of (0002) rocking curve scan was close to 162 plus-minus 11 arcsec
format	Статья
author	Tarala, V. A. Тарала, В. А. Altakhov, A. S. Алтахов, А. С. Ambartsumov, M. G. Амбарцумов, М. Г. Martens, V. Y. Мартенс, В. Я. Shevchenko, M. Y. Шевченко, М. Ю.
author_facet	Tarala, V. A. Тарала, В. А. Altakhov, A. S. Алтахов, А. С. Ambartsumov, M. G. Амбарцумов, М. Г. Martens, V. Y. Мартенс, В. Я. Shevchenko, M. Y. Шевченко, М. Ю.
author_sort	Tarala, V. A.
title	Growth of heteroepitaxial aluminium nitride films on aluminium oxide substrates via PEALD method
title_short	Growth of heteroepitaxial aluminium nitride films on aluminium oxide substrates via PEALD method
title_full	Growth of heteroepitaxial aluminium nitride films on aluminium oxide substrates via PEALD method
title_fullStr	Growth of heteroepitaxial aluminium nitride films on aluminium oxide substrates via PEALD method
title_full_unstemmed	Growth of heteroepitaxial aluminium nitride films on aluminium oxide substrates via PEALD method
title_sort	growth of heteroepitaxial aluminium nitride films on aluminium oxide substrates via peald method
publisher	Institute of Electrical and Electronics Engineers Inc.
publishDate	2018
url	https://www.scopus.com/record/display.uri?eid=2-s2.0-85017584082&origin=resultslist&sort=plf-f&src=s&nlo=1&nlr=20&nls=afprfnm-t&affilName=north+caucasus+federal+university&sid=4a2a77c64cce8892f9521d5be1c7d9a7&sot=afnl&sdt=sisr&sl=53&s=%28AF-ID%28%22North+Caucasus+Federal+University%22+60070541%29%29&ref=%28Growth+of+heteroepitaxial+aluminium+nitride+films+on+aluminium+oxide+substrates+via+PEALD+method%29&relpos=0&citeCnt=0&searchTerm= https://dspace.ncfu.ru/handle/20.500.12258/3039
work_keys_str_mv	AT taralava growthofheteroepitaxialaluminiumnitridefilmsonaluminiumoxidesubstratesviapealdmethod AT taralava growthofheteroepitaxialaluminiumnitridefilmsonaluminiumoxidesubstratesviapealdmethod AT altakhovas growthofheteroepitaxialaluminiumnitridefilmsonaluminiumoxidesubstratesviapealdmethod AT altahovas growthofheteroepitaxialaluminiumnitridefilmsonaluminiumoxidesubstratesviapealdmethod AT ambartsumovmg growthofheteroepitaxialaluminiumnitridefilmsonaluminiumoxidesubstratesviapealdmethod AT ambarcumovmg growthofheteroepitaxialaluminiumnitridefilmsonaluminiumoxidesubstratesviapealdmethod AT martensvy growthofheteroepitaxialaluminiumnitridefilmsonaluminiumoxidesubstratesviapealdmethod AT martensvâ growthofheteroepitaxialaluminiumnitridefilmsonaluminiumoxidesubstratesviapealdmethod AT shevchenkomy growthofheteroepitaxialaluminiumnitridefilmsonaluminiumoxidesubstratesviapealdmethod AT ševčenkomû growthofheteroepitaxialaluminiumnitridefilmsonaluminiumoxidesubstratesviapealdmethod
_version_	1760531733726363648

Growth of heteroepitaxial aluminium nitride films on aluminium oxide substrates via PEALD method

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