Growth of heteroepitaxial aluminium nitride films on aluminium oxide substrates via PEALD method
Research was performed on possibility of growth of heteroepitaxial aluminum nitride films on (0001) sapphire substrates within 210 to 300 degrees Celsius temperature range via plasma-enhanced atomic layer deposition. Samples created were studied by ellipsometry, x-ray diffraction analysis and rockin...
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| Asıl Yazarlar: | , , , , , , , , , |
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| Materyal Türü: | Статья |
| Dil: | English |
| Baskı/Yayın Bilgisi: |
Institute of Electrical and Electronics Engineers Inc.
2018
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| Konular: | |
| Online Erişim: | https://www.scopus.com/record/display.uri?eid=2-s2.0-85017584082&origin=resultslist&sort=plf-f&src=s&nlo=1&nlr=20&nls=afprfnm-t&affilName=north+caucasus+federal+university&sid=4a2a77c64cce8892f9521d5be1c7d9a7&sot=afnl&sdt=sisr&sl=53&s=%28AF-ID%28%22North+Caucasus+Federal+University%22+60070541%29%29&ref=%28Growth+of+heteroepitaxial+aluminium+nitride+films+on+aluminium+oxide+substrates+via+PEALD+method%29&relpos=0&citeCnt=0&searchTerm= https://dspace.ncfu.ru/handle/20.500.12258/3039 |
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Tam Metin Erişim
Yazar: Tarala, V. A., Тарала, В. А., Altakhov, A. S., Алтахов, А. С., Ambartsumov, M. G., Амбарцумов, М. Г., Martens, V. Y., Мартенс, В. Я., Shevchenko, M. Y., Шевченко, М. Ю.
Baskı/Yayın Bilgisi 2018
Tam Metin ErişimBaskı/Yayın Bilgisi 2018
Tam Metin Erişim
Статья